...deposited as very thin films on structured surfaces. The self-limiting growth mechanism characteristic to atomic layer deposition (ALD) facilitates the control of film thickness at the atomic level and allows deposition on large and complex surfaces. These features make ALD a very promising technique for future integrated circuits. Recent ALD research has mainly focused on materials required in microelectronics. Chemistry, in particular the selection of suitable precursor combinations, is the key issue in ALD; many interesting results have been obtained by smart chemistry. ALD is also likely to find applications in other areas, such as magnetic recording heads, optics, demanding protective coatings, and micro-electromechanical systems, provided that cost-effective processes can be found for the materials required. N 1. Introduction Atomic layer deposition (ALD) has recently received much interest as a potential deposition method for advanced thin-film structures. However, ALD had already been developed and introduced worldwide with the name Atomic Layer Epitaxy (ALE) in the late 1970s.[1] The motivation for the development of ALD was the need for a deposition method for thin-film electroluminescent (TFEL) flat-panel displays. For such an application, high-quality dielectric and luminescent films are required on large-area substrates.[2] ALD is still used today in the industrial production of TFEL...
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...ARTICLES PUBLISHED ONLINE: 18 MAY 2015 | DOI: 10.1038/NNANO.2015.89 Black silicon solar cells with interdigitated back-contacts achieve 22.1% efficiency Hele Savin1*, Päivikki Repo1, Guillaume von Gastrow1, Pablo Ortega2, Eric Calle2, Moises Garín2 and Ramon Alcubilla2 The nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might lead to both an increase in efficiency and a reduction in the manufacturing costs of solar cells. However, all previous attempts to integrate black silicon into solar cells have resulted in cell efficiencies well below 20% due to the increased charge carrier recombination at the nanostructured surface. Here, we show that a conformal alumina film can solve the issue of surface recombination in black silicon solar cells by providing excellent chemical and electrical passivation. We demonstrate that efficiencies above 22% can be reached, even in thick interdigitated back-contacted cells, where carrier transport is very sensitive to front surface passivation. This means that the surface recombination issue has truly been solved and black silicon solar cells have real potential for industrial production. Furthermore, we show that the use of black silicon can result in a 3% increase in daily energy production when compared with a reference cell with the same efficiency, due to its better angular...
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...Our reference: MR 10661 P-authorquery-v11 AUTHOR QUERY FORM Journal: MR Please e-mail or fax your responses and any corrections to: E-mail: corrections.esch@elsevier.sps.co.in Article Number: 10661 Fax: +31 2048 52799 Dear Author, Please check your proof carefully and mark all corrections at the appropriate place in the proof (e.g., by using on-screen annotation in the PDF file) or compile them in a separate list. Note: if you opt to annotate the file with software other than Adobe Reader then please also highlight the appropriate place in the PDF file. To ensure fast publication of your paper please return your corrections within 48 hours. For correction or revision of any artwork, please consult http://www.elsevier.com/artworkinstructions. Any queries or remarks that have arisen during the processing of your manuscript are listed below and highlighted by flags in the proof. Click on the ‘Q’ link to go to the location in the proof. Location in article Query / Remark: click on the Q link to go Please insert your reply or correction at the corresponding line in the proof Q1 Q2 Q3 Q4 Please confirm that given names and surnames have been identified correctly. Kindly check whether the affiliation ‘a’ is okay as typeset, and correct if necessary. Kindly check whether the identification of corresponding author and details are okay as typeset, and correct if necessary. Kindly check and approve the edit of this line ‘It is known that the breakdown of MIM capacitors is...’...
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...Technologies for Nanoscale CMOS by Pankaj Kalra Doctor of Philosophy in Engineering – Electrical Engineering and Computer Sciences University of California, Berkeley Professor Tsu-Jae King Liu, Chair Transistor scaling has been the driving force for technology advancements in the semiconductor industry over the last few decades. In order to mitigate short channel effects, the gate-oxide thickness and source/drain junction depth have been scaled along with the gate length. Recently, however, gate-oxide thickness scaling has slowed, as evidenced by the fact that an equivalent oxide thickness (EOT) of ~1 nm has been used for the past 2-3 generations of CMOS technology. Although significant progress has been made in the development of high-permittivity (high-κ) gate-dielectric materials and metal gate technology in recent years, it will be difficult to scale EOT well below 1 nm. This makes junction-depth scaling even more pressing for continued transistor scaling. Furthermore, as the dimensions of MOSFETs are scaled down, the contact resistance of...
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...FORD FOCUS Visionary. Ingenious. Remarkable. Every car bears his signature. Unlock extra content online. Use an appropriate app on your smartphone or tablet to scan the QR codes in this brochure. The world s best-selling name plate just got even better. The new Focus has a sleek exterior, an elegant new grille, and new state-of-the-art headlights and rear lights. Sit inside and you ll appreciate the enhanced instrument panel and a new-design steering wheel. But it is the new technology such as a parking system that gets you in and out of tight spaces that ensures the most technologically advanced car in its class stays that way. Control Blade independent rear suspension The Ford Focus offers you an addictive driving experience. A key element is the Control Blade independent rear suspension that absorbs both horizontal and vertical rear-wheel movement and provides passive rear wheel steering for increased cornering stability. 6 7 EcoBoost.The story of LESS FUEL MORE POWER. With its turbocharger, direct injection and diamond-like coating on the piston rings, the Ford EcoBoost engine produces the same performance as a larger engine, but with superior fuel economy and lower emissions. The new Ford Focus gives you a choice of three EcoBoost engine sizes: ■ ■ The 1.0-litre EcoBoost The 1.5-litre EcoBoost The 2.0-litre EcoBoost three times winner of International Engine of the Year. all the power and performance of the 1.6-litre ultimate power, available...
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...Keele St. Huntington Rd. Ave. Weston R d. Kipling Av e. Pine Valle y nc Woo drive h D Rd. Kersey McCowan Rd. Cook Na p Kennedy Rd. Keele Weston Ve llore Gdns. Brodie Dr. 10 10 Rutherford Rd. 13 85A 10 Rutherford Rd. 85A 85A Fincham Ave. 85A,B 63 360 Rutherford 85+ Rd. Rutherford 107B 86 105 Rutherford 85+ 105 86 R 23 non-Rush 23 86 86 88E 85+ Rd. d. Springh Hillcrest Carrville Rd. Mall 11 Maple Av e. Stone Mason Dr. 85,B Yonge St . hattan Man Avenu e Clarence St. Pearson Ave. Unionville asant Rid ge Av. k ee W. Be ave r Cr Bayview Buc Allstate Pkwy. Dufferin Point Dr. Hunter's Isling ton Ave. East Valhalla Dr. Frontenac Ple E. Nor th R ivermed e Rd. Morning Sta rD 15 23+ 23+ 12 14 23+ Eagle Edgeley Bl vd. Millway Ave. Rd. Forest Dr. Chate laine Dr. Jane Creditston e Ave. Weston Warden McCowan Rd. Pr ofe ss ors La ke Pk wy. Keele Pine Valle y Dr. Whitmore Rd. Grove R d. Atkinson i nster Yonge St . Hood Rd. Ave. Hend erso n Ave. Martin Ne w Bayview Dr St . Peter Kaiser Gt. Win Mountcastle Gt. term ute Blvd Birc . hm Rd. 32 ms illia W y. Pkw 19 19 92 al ntr Ce Par k Founders Blvd. Cr. le 12 Hillda Rossdean Petrolia Claire Ave. Rd. Hull Dr. Signet ...
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...LINUX: Rute User’s Tutorial and Exposition Paul Sheer August 14, 2001 Pages up to and including this page are not included by Prentice Hall. 2 “The reason we don’t sell billions and billions of Guides,” continued Harl, after wiping his mouth, “is the expense. What we do is we sell one Guide billions and billions of times. We exploit the multidimensional nature of the Universe to cut down on manufacturing costs. And we don’t sell to penniless hitchhikers. What a stupid notion that was! Find the one section of the market that, more or less by definition, doesn’t have any money, and try to sell to it. No. We sell to the affluent business traveler and his vacationing wife in a billion, billion different futures. This is the most radical, dynamic and thrusting business venture in the entire multidimensional infinity of space-time-probability ever.” ... Ford was completely at a loss for what to do next. “Look,” he said in a stern voice. But he wasn’t certain how far saying things like “Look” in a stern voice was necessarily going to get him, and time was not on his side. What the hell, he thought, you’re only young once, and threw himself out of the window. That would at least keep the element of surprise on his side. ... In a spirit of scientific inquiry he hurled himself out of the window again. Douglas Adams Mostly Harmless Strangely, the thing that least intrigued me was how they’d managed to get it all done. I suppose I sort of knew. If I’d learned...
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