...CMOS Technology The most common description of the evolution of CMOS technology is known as Moore’s law. In 1963 Gordon Moore predicted that the transistor count would double every 18 months. The observation made by Gordon Moore was that the number of components on the most complex integrated circuit chip would double each year for the next 10 years. Frank Wanlass at Fairchild described the first CMOS logic gate (nMOS and pMOS) in 1963. Developments in complementary metal oxide semiconductor (CMOS) technology allow the sensors to penetrate into high-performance applications that were previously not practical. In the eighties, CMOS processes were widely adopted. Present day chips would not exist if the CMOS technique would not have been implemented around the late eighties. CMOS sensors were known for their fast speeds, but less for image quality. The newest CMOS sensors now combine both high speed and excellent image quality, and are rapidly becoming more popular in both area-scan and line-scan machine-vision applications. CMOS sensors are characterized by having parts of the electronics, the read-out system and the illumination control located directly adjacent to the photosensitive surface. One main advantage of this design is that each pixel can be controlled and read out directly. One drawback is that a part of each pixel is occupied by electronic components, which reduces the fill factor. CMOS technology allows a variety of both analogue and digital functions...
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...Randy Ramirez NT1110 2/12/2014 C-mos Complementary metal–oxide–semiconductor (CMOS) Pronouncedsee-moss, CMOS is a widely used type of semiconductor. CMOS semiconductors use both NMOS (negative polarity) and PMOS (positive polarity) circuits. Since only one of the circuit types is on at any given time, CMOS chips require less power than chips using just one type of transistor. This makes them particularly attractive for use in battery-powered devices, such as portable computers.Personal computers also contain a small amount of battery-powered CMOS memory to hold the date, time, andsystem setup parameters. CMOS is an on-board semiconductor chip powered by a CMOS battery inside computers that stores information such as the system time and date and the system hardware settings for your computer. In the picture to the right, is an example of the most common CMOS coin cell battery used in a computer to power the CMOS memory. A Motorola 146818 chip was the first RTC and CMOS RAM chip to be used in early IBM computers. The chip was capable of storing a total of 64 bytes of data. Since the system clock used 14 bytes of RAM, this left an additional 50 bytes of space that was available for IBM to store system settings. Today, most computers have moved the settings from a separate chip and incorporated them into the southbridge or Super I/O chips. The standard lifetime of a CMOS battery is around 10 Years. However, this can vary depending on the use and environment that the computer...
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...Warren White Complementary metal–oxide–semiconductor (CMOS) The progress in the CMOS arena has made this technology well suited for RF and microwave operations at the high level of integration,1 and the continuous improvement of the device performance has made it a contender for low-power and eventually low-cost radio front-end. The paper introduces the RF speci¯cations of the latest nm (nanometer) CMOS node and present the evolution of the RF-FOMs2,3 with gate downscaling over the past nanometer generations. Whether we discuss the digital, analog, or RF performance of a technology, ¯gures-of-merit are used to quantify its potential. Since 45 nm CMOS is the next generation to be available in production we present here its RF performance estimated from the simulations. First, we introduce the devices considered in this work followed by a validation of the simulation results. Then we present their estimated RF speci¯cations. Finally, we illustrate the e®ect of gate downscaling on the peak RF performance of bulk planar CMOS transistors. Estimated RF speci¯cation for 45 nm CMOS are 240/290 GHz (fT/fMAX), and an extended set of speci¯cations as been established including boundary conditions and other RF-FOMs. The actual RF power and bandwidth performance of a 45 nm device can be reduced up to 25% compared to the speci¯cations because realistic bias conditions can be far o® from the one used in the de¯nition for the RF speci¯cations. Downscaling is more bene¯cial...
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...Semiconductor, or CMOS, is a widely used type of semiconductor. CMOS semiconductors use both NMOS(negative polarity) and PMOS(positive polarity) circuits. Since only one of the circuit types is on at any given time, CMOS chips require less power than chips using just one type of transistor. This feature makes them convenient for use in battery-powered devices such as laptops. Personal computers also contain a small amount of battery-powered CMOS memory to hold the date, time, and the system setup parameters. To access the CMOS on most computers, press the delete key as the computer is booting.(CMOS, 2013) CMOS has made changes over the years. CMOS memory has been changed from analog to digital. Another important change is the speed has increased. CMOS has also made changes in regards to noise reduction.(CMOS, 2013) In regards to size, CMOS memory has remained relatively unchanged over the years. It is only required to hold the basic boot settings for the system and so there was no need to increase the memory size. However, the size of the CMOS memory changes on the way it is set. Memory has the ability to be added or reduced from the computer.(CMOS Memory Size Mismatch, 2013) Over the years, CMOS has evolved into using EEPROM. CMOS does, at times, still use a battery on the motherboard but EEPROM is more popular. EEPROM is considered an advance feature and, as a result, has not yet been accepted by the majority of the market.(CMOS, 2013) Works Cited CMOS. (2013)....
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...IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 47, NO. 7, JULY 2012 1585 A 53-nW 9.1-ENOB 1-kS/s SAR ADC in 0.13- m CMOS for Medical Implant Devices Dai Zhang, Student Member, IEEE, Ameya Bhide, Student Member, IEEE, and Atila Alvandpour, Senior Member, IEEE Abstract—This paper describes an ultra-low power SAR ADC for medical implant devices. To achieve the nano-watt range power consumption, an ultra-low power design strategy has been utilized, imposing maximum simplicity on the ADC architecture, low transistor count and matched capacitive DAC with a switching scheme which results in full-range sampling without switch bootstrapping and extra reset voltage. Furthermore, a dual-supply voltage scheme allows the SAR logic to operate at 0.4 V, reducing the overall power consumption of the ADC by 15% without any loss in performance. The ADC was fabricated in 0.13- m CMOS. In dual-supply mode (1.0 V for analog and 0.4 V for digital), the ADC consumes 53 nW at a sampling rate of 1 kS/s and achieves the ENOB of 9.1 bits. The leakage power constitutes 25% of the 53-nW total power. Index Terms—ADC, analog-to-digital conversion, leakage power consumption, low-power electronics, medical implant devices, successive approximation. I. INTRODUCTION EDICAL implant devices, such as pacemakers and implantable cardiac defibrillators, target increasingly advanced signal acquisition and signal processing systems. Such devices, which are to be implanted in the human body, require extremely low...
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...RESUELTOS Y EXPLICADOS DE FORMA CLARA VISITANOS PARA DESARGALOS GRATIS. CHAPTER 5 THE CMOS INVERTER Quantification of integrity, performance, and energy metrics of an inverter Optimization of an inverter design 5.1 5.2 5.3 Exercises and Design Problems The Static CMOS Inverter — An Intuitive Perspective Evaluating the Robustness of the CMOS Inverter: The Static Behavior 5.3.1 5.3.2 5.3.3 Switching Threshold Noise Margins Robustness Revisited 5.5 5.4.2 5.4.3 Propagation Delay: First-Order Analysis Propagation Delay from a Design Perspective Power, Energy, and Energy-Delay 5.5.1 5.5.2 5.5.3 5.5.4 Dynamic Power Consumption Static Consumption Putting It All Together Analyzing Power Consumption Using SPICE 5.4 Performance of CMOS Inverter: The Dynamic Behavior 5.4.1 Computing the Capacitances 5.6 Perspective: Technology Scaling and its Impact on the Inverter Metrics 180 Section 5.1 Exercises and Design Problems 181 5.1 Exercises and Design Problems 1. [M, SPICE, 3.3.2] The layout of a static CMOS inverter is given in Figure 5.1. (λ = 0.125 µm). a. Determine the sizes of the NMOS and PMOS transistors. Solution The sizes are wn=1.0µm, ln=0.25µm, wp=0.5µm, and lp=0.25 µm. b. Plot the VTC (using HSPICE) and derive its parameters (VOH, VOL, VM, VIH, and VIL). Solution The inverter VTC is shown below. For a static CMOS inverter with a supply voltage of 2.5 V, VOH =2.5 V and VOL=0 V. In order to calculate Vm , note from the...
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...CMOS A CMOS (Complementary Metal-Oxide Semiconductor) is a technology for constricting integrated circuits, which is used in microprocessors, microcontrollers and Static RAM, image sensors and data converters. CMOS are constructed in a way that all PMOS transistors are constructed in a way that all PMOS transistors must have either an input from the voltage source or from another PMOS transistor and the composition of a PMOS transistor creates low resistance between its source and drain contacts when a low gate voltage is applied and high resistance when a high gate is applied. On another note, the composition of NMOS transistor creates high resistance between source and drain when a low gate voltage is applied and low resistance when a high gate voltage is applied. An important characteristic of the CMOS circuit is the duality that exists between its PMOS and NMOS transistors. CMOS circuit is created to allow a path to always exist from the output to the power source or the ground. For that to be able to happen, he set of all paths to the voltage source must be the complement of the set of all path to the ground and this could be easily accomplished by defining one in terms of the NOT of the other. CMOS logic dissipates less power than NMOS logic circuits because CMOS dissipates power only switching to “dynamic power”. Static CMOS gates are immensely power efficient because they dissipate nearly zero power when idle and CMOS technology moved below sub-micron levels the power...
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...Unit 7 Research Paper 1: CMOS CMOS is known as Complementary Metal Oxide Semiconductor. It is a technology used for constructing integrated circuits. The technology is used in microprocessors, microcontrollers, static RAM, and other digital circuits. Frank Wanlass patented CMOS in 1963. CMOS’s typical design is for logic functions using various MOSFETs also known as Metal Oxide Semiconductor Field Effect Transistors. The early types of CMOS, which is used to store BIOS memory, used the on-board battery to maintain the power to the CMOS at all times. This prevented your memory settings that were stored on board from being erased after turning your computer off or after loss of power. In modern CMOS systems, the CMOS does not use the on-board battery to maintain and save BIOS settings; instead the battery is only used to provide power to the system clock on board the PC. Memory on-board the CMOS has relatively remained unchanged since it was first patented. Memory for CMOS ranges from 128 bytes to the largest, as of yet, of 512 bytes. The reason for not needing the change in size is that CMOS was and is only designed to hold the absolute basic boot settings needed for any given system. CMOS does indeed still utilize RAM for startup functions on a PC as of today, which has not changed since it was developed. Again, as mentioned above, the CMOS does not utilize the battery located on the motherboard any longer. CMOS has evolved into using EEPROM or Electrically Erasable...
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...DESIGN OF A HIGH-SPEED CMOS COMPARATOR Master Thesis in Electronics System at Linköping Institute of Technology by Ahmad Shar LiTH-ISY-EX--07/4121--SE Linköping 2007-11-07 DESIGN OF A HIGH-SPEED CMOS COMPARATOR Master Thesis in Electronics System at Linköping Institute of Technology by Ahmad Shar LiTH-ISY-EX--07/4121--SE Supervisor: Erik Säll ISY, Linköping University Examiner: Mark Vesterbacka ISY, Linköping University Linköping 2007-11-07 Presentation Date 2007-11-07 Publishing Date (Electronic version) 2007-12-07 Department and Division Division of electronics system Department of Electrical Engineering Linköpings university Linköpings Sweden Language English Other (specify below) Type of Publication Licentiate thesis Degree thesis Thesis C-level Thesis D-level Report Other (specify below) ISBN Master Thesis ISRN: LiTH-ISY-EX--07/4121--SE Title of series (Licentiate thesis) Series number/ISSN (Licentiate thesis) Number of Pages 30 URL, Electronic Version http://www.ep.liu.se Publication Title Design of a high-speed CMOS comparator. Author(s) Ahmad Shar A bstract T his m aster thesis describ es the d esign of high-speed latched com p ara tor w ith 6-bit resolution , full scale voltage of 1 .6 V and the sa m plin g frequ ency of 25 0 M H z. T he com p arato r is d esigne d in a 0.3 5 9 m C M O S process w ith a sup ply voltage of 3.3 V . T he com parator is designed for tim e-in terleaved bandp ass sigm a-delta...
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... | |Loi Phat Dinh | | |Parameter |Pre-design estimate |Actual |Units | |Adder topology |Modified Brent-Kung | |Circuit style |Static CMOS | |Critical path delay |1.77 |1.33 |ns | |Worst case energy per addition |41 |68 |pJ | |Layout Area |25380 |27495 |μm2 | | |GRADE | |Result (30%) ...
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...Complementary metal–oxide–semiconductor (CMOS) is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. Frank Wanlass patented CMOS in 1967 (US patent 3,356,858). CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS). The words "complementary-symmetry" refer to the fact that the typical digital design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions. Two important characteristics of CMOS devices are high noise immunity and low static power consumption. Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor-transistor logic(TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips. The phrase "metal–oxide–semiconductor" is a reference to the...
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...Source/Drain Technologies for Nanoscale CMOS by Pankaj Kalra B. Tech. (Banaras Hindu University) 2003 A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Engineering – Electrical Engineering and Computer Sciences in the GRADUATE DIVISION of the UNIVERSITY OF CALIFORNIA, BERKELEY Committee in charge: Professor Tsu-Jae King Liu, Chair Professor Chenming Hu Professor Eugene E. Haller Fall 2008 The dissertation of Pankaj Kalra is approved: Professor Tsu-Jae King Liu, Chair Date Professor Chenming Hu Date Professor Eugene E. Haller Date University of California, Berkeley Fall 2008 Advanced Source/Drain Technologies for Nanoscale CMOS Copyright © 2008 by Pankaj Kalra Abstract Advanced Source/Drain Technologies for Nanoscale CMOS by Pankaj Kalra Doctor of Philosophy in Engineering – Electrical Engineering and Computer Sciences University of California, Berkeley Professor Tsu-Jae King Liu, Chair Transistor scaling has been the driving force for technology advancements in the semiconductor industry over the last few decades. In order to mitigate short channel effects, the gate-oxide thickness and source/drain junction depth have been scaled along with the gate length. Recently, however, gate-oxide thickness scaling has slowed, as evidenced by the fact that an equivalent oxide thickness (EOT) of ~1 nm has been used for the past 2-3 generations of CMOS technology. Although significant progress...
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...where C_gP^* is the gate capacitor per unit width of Mp2, f_cis the carrier frequency (f_c=13.56 MHz), D_effis the effective duty cycle, and W_p is the width of Mp2. Additionally, the optimal size ration for the NMOS and PMOS transistors (Mn1, Mn2, Mp1 and Mp2) has been proven in [2], and van be formed as: (W_p/W_n )=√((K_n (V_REC-V_(ThN) ))/(K_p (V_REC-|V_(ThP) |) )) (3.5) where K_n=μ_n C_ox and K_p=μ_p C_ox, are the transconductances of the NMOS and PMOS, respectively. The main rectifying transistors should have an optimal sizes to minimize the power dissipation depending on f_c and R_L because large transistors will decrease the R_on loss, but it will increase the switching loss. More over large transistors will make an impact on the speed of the comparator due to the gate capacitance [2]. 3.3 The Comparator Comparator is one of the most generally used analog simple integrated circuits. Thus, high power comparator is a tremendous approach to operate a large rectifying transistors at high operating frequency (13.56 MHz) with high operating efficiency, and low power consumption. The turn on and turn off delays of the comparators have an effect on the power efficiency of the rectifier because these delays can cause a reverse current and also affect the switching time of the PMOS transistors. Therefore, the operation of the comparators is controlled by its delay propagation (Tp), which means how speedily the output can behave to a change in the input. Because of that, the comparator...
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...physician does not know which part of the small intestine is affected. So his friend encourages him to come up with better technology. Due to technology revolution after decade small video cameras which uses image sensors like CCDS (Charge coupled devices) has been developed. With his knowledge from developing the eye of guided missile he tried to make small missile like device which could travel through the intestine without a life line leading to the outside of the body and transmit images wirelessly to a receiver outside of the body. He has also done small experiment on chicken with his developed camera and as he succeeds he got more encouragement but he found battery of that camera get exhausted in few minutes. So he developed a prototype CMOS (complementary metal oxide semiconductors) which only consume a fraction of power then CCD and applied for an initial patent on this camera device. Gaviel Meron the CEO of Applitec Ltd., company which makes small endoscopic cameras had founded Given Imaging (GI – gastrointestinal, V – video, EN – endoscopy) to develop and market the technology. Also on joining with Dr. Swain’s team who was working on...
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...physician does not know which part of the small intestine is affected. So his friend encourages him to come up with better technology. Due to technology revolution after decade small video cameras which uses image sensors like CCDS (Charge coupled devices) has been developed. With his knowledge from developing the eye of guided missile he tried to make small missile like device which could travel through the intestine without a life line leading to the outside of the body and transmit images wirelessly to a receiver outside of the body. He has also done small experiment on chicken with his developed camera and as he succeeds he got more encouragement but he found battery of that camera get exhausted in few minutes. So he developed a prototype CMOS (complementary metal oxide semiconductors) which only consume a fraction of power then CCD and applied for an initial patent on this camera device. Gaviel Meron the CEO of Applitec Ltd., company which makes small endoscopic cameras had founded Given Imaging (GI – gastrointestinal, V – video, EN – endoscopy) to develop and market the technology....
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