When an N-channel D-MOSFET has ld>ldss,it
a. is operating in enhancement mode-answer
b. is reverse biased
c. is forward biased
d. is operating in depletion mode

if the base resistor has zero resistance, the transistor will probably
a.none of the above
b.cutoff
c.destroyed
d.saturated

when an N-channel D-MOSFET has Vgs<0,it
a.is operating in enhancement mode
b.is reverse biased
c. is forward biased
d.is operating in depletion mode

in an NPN transistor,the majority carries in the emitter are
a.both
b.free electrons
c.holes
d.neither

in the schematic symbol of NPN BJT, what is terminal that indicates the direction of current
a.emitter
b.collector
c.base

Given the circuit, determine the value of Vce(cut-off)?
7.7
a.7.8V
b.12V
c.7.9V
d.5V

A transistor acts like a diode and a
a.power supply
b.voltage source
c.current source
d.resistance

a transistor has how many PN junctions
a.4
b.1
c.3
d.2

The change in loadline is caused by change in
a.lc
b.lb
c.Rc
d.Vcc

the fact that there are many free electrons in a transistor emitter region means the emitter is
a.none of the above
b.lightly doped
c.heavily doped
d.undoped

in a normally biased transistor, the electrons in the emitter have enough energy to overcome the depletion layer in the
a.recombination path
b.BE junction
c.BC junction
d.CB junction

increasing the gate voltage negatively of N-channel JFET will increase the channel current
*a.true
b.false

CMOS devices use
a.PNP-NPN
*b.DMOS-EMOS
c.BJT-JFET
d.NMOS-PMOS

what is one important thing transistors do?
a.step down voltage
b.rectify line voltage
c.amplify weak signals
d.emit light

Based on the figure,which statement is true?
a. the collector voltage is not equal to collector-emitter voltage
b. the output loop involves collector-base voltage
c. the output current is le
d. the base resistance Rb should be much greater that collector resistance Rc

An E-MOSFET with its gate connected to its drain is an example of
a. passive load
b. a 3 terminal device
c. a switching device
d. an active load

Most of the electrons in the base of the NPN transistor flow
a.into the emitter
b.out of the base lead
c.into the base supply
d.into the collector when the output collector voltage has maximum value. The transistor operates in
a.saturation region
b.active region
c.none of the above
d.cut-off region

if the base supply voltage decreases, the Q point moves a. Up b. Off the loadline c. Sameposition d. Down

When the output collector current has maximum value. The transistor is a. None of the above b. OFF c. Fully ON d. Linear amplifier

The BE voltage is usually a. Cut-off voltage b. Reverse biased c. The output voltage d. Forward biased

A JFET is considered to be a a. Passive device b. Normally on device c. Current controlled device d. Normally off device

When the BJT acts as an open switch, the transistor operates in a. Saturation region b. Active region c. None of the above d. Cut-off region

Given the parts as letters,identify the following description
An insulating material d. a. D The base semiconductor b. D The input terminal c. c. E Drain c. d. C Substrate e. e. A Source b. f. A Gate a. g. B Usually connected to source f. h. A for discrete devices
When the base current increases, the collector voltage will probably a. Will change its polarity b. *Decrease c. Increase d. Stays the same Inversion channel in D-MOSFET will turn ON the devices a. True b. False

If the base supply voltage decreases, the Q point moves a. Same position b. Up c. Down d. Off the loadline
Three different Q-pts are shown on the load line.the upper Q-pt.represents a. Highest voltage b. Lowest current c. Lowest voltage d. Middle current

The beta of the transistor is the a. Transconductance b. Current gain c. Amplifier factor d. Ratio of emitter and collector current
E-MOSFET can operate in the a. Depletion mode only b. Enhancement only c. Depletion or enhancement mode d. Low impedance mode
The base of an NPN transistor is thin and a. N-type semiconductors b. Doped by donor atoms c. Has few carriers d. Has lots of carriers
What is the most important fact about the collector current a. equals current gain times base current b. equals emitter current c. is small d. measured in amperes

if the current gain is 120 and the collector current is 24mA, the base current is a. 20uA b. 0.2uA c. 2uA d. 200uA
An E-MOSFET is considered to be a a. Current controlled device b. Normally on device c. Passive device d. Normally off device
When the BJT acts as an open switch, the transistor operates in a. Active region b. Saturation region c. None of the above d. Cut-off region e.
The capacitance of a varactor diode increases when the reverse voltage across it a. Breaks down b. Decreases c. Stores charges d. Increases
In JFET, the gate controls a. The width of the channel b. All of the above c. The drain current d. The gate voltage
In a normally biased transistor, the electrons in the emitter have enough energy to overcome the depletion layer in the a. Recombination path b. BE junction c. CB junction d. BC junction

Input: 000

Given the circuit, determine the value of lc(saturated)? a. 5mA b. 100mA c. 12mA d. 4.1mA
A photodiode is normally a. Neither forward nor reverse b. Emitting light c. Reverse biased d. Forward biased

Given the circuit, determine the output based on input combination
Input:001

A D-MOSFET is considered to be a. Current controlled device b. Normally on device c. Passive device d. Normally off device
The main advantage of CMOS is its
Low power consumption a. Small-signal operation b. Fast swtiching c. Design orthogonality d. *Small power rating

The current at the gate of JFET is zero when operating in the saturation/active region a. True b. False

The biasing of the gate and source of JFET must be reverse so that will operate properly a. True b. False
The power biasing dissipated by a transistor is approximately equals the collector current times a. 0.7 b. CE voltage c. Base supply voltage d. BE voltage
The drain and source can be use interchangeably a. True b. False
Inversion channel exist when the gate-source voltage exceeds threshold voltage. a. True b. False
Which of these is the best description of zener diode a. It is a constant voltage device b. It works in the forward region c. It is a rectifier diode d. It is a constant current device
Based on the figure above, when the input is zero the ohmic region is less than 4v a. True b. false The Q-point is located in a. breakdown region b. saturation region c. active region d. cutoff region
The barrier potential across each silicon depletion layer is a. 1v b. 0.7v c. 0 d. 0.3v
Compare the BJT, JFET has much higher a. Input resistance b. Supply voltage c. Current d. Voltage gain

A JFET a. Has very large voltage gain b. Has low input resistance c. Is current controlled device d. Is voltage-controlled device

Given the circuit,determine the value of lb? a. 43uA b. 44uA c. 41uA d. 42uA
Most of the electrons that flow through the base will a. Recombine with base holes b. Have a negative charge c. Recombine with collector holes d. Flow into the collector

The points in the graph is caused by a. Change in lc b. Change in Vcc c. Change in Vce d. Change in lb
The current gain of the transistor is defined as the ratio of the collector current current to the a. Collector current b. Base current c. Supply current d. Emitter current
The JFET’s pinch-off voltage a. Will turn on the device b. Will turn off the channel c. will enhance the channel d. Will decrease the depletion layer
In the schematic symbol of NPN BJT, what is the terminal that indicates the direction of current a. Emitter b. Base c. Collector

The sudden increase in current above 50 volts shows a. Cutoff region b. Breakdown region c. Active region d. Saturation region

The change in the loadline is caused by change in a. Vcc b. Rc c. Lb d. Lc
The current at the gate of JFET is zero when operating in the ohmic region a. True b. False
The device associated with voltage-controlled capacitance is a. LED b. Photodiode c. Varactor diode d. Zener diode

If the transistor operates in the middle of the loadline, an increase in the base resistance will move the Q-pt a. Same position b. Down c. Off the loadline d. Up
D-MOSFET can operate in the a. Depletion or enhancement mode b. Depletion mode only c. Enhancement only d. Low impedance mode
A zener diode a. Has a barrier potential of 1V b. Is forward biased c. Is a battery d. Has a constant voltage in the breakdown region
Decreasing the collector supply voltage will decrease a. Collector current b. Base current c. None of the above d. Emitter current
When an N-channel D-MOSFET has Vgs>0,it a. Is reverse biased b. Is operating in depletion mode c. Is operating in enhancement mode d. Is forward biased

Both PMOS and NMOS will turn ON in CMOS simultaneously. a. True b. False
The input impedance of JFET a. Approaches one b. *Approaches infinity c. *Impossible to predict d. Approaches zero
A unipolar transistor uses a. Only hopes b. Both electrons and holes c. Either one or the other but not both d. Only free electrons
A BJT is considered to be a
a. Normally off device
b. Voltage controlled device
c. Normally on device
d. Passive device
Based on the figure above, the value of ldss is 0mA
a. True
b. False
Determine if the item below is digital or analog

Signals are continuous in amplitude
Designed at the system level components have fixed values requires precision modelling programmable by software
CAD tool have been extremely successful regular blocks performance optimized

Given the circuit, determine the value of lc(saturated)? a. 4.1mA b. 12mA c. 100mA d. 5mA
If the base resistor is very small, the transistor will operate in the
a. Active region
b. Cut-off region
c. Breakdown region
d. Saturation region if the collector resistor is open, the collector voltage is
a. Unchanged
b. High
c. Unknown
d. Low

most of the electron in the base of the NPN transistor flow
a. into the base supply
b. Out of the base lead
c. Into the emitter
d. Into the collector

The CE voltage is usually
a. less than BE voltage
b. More than the BE voltage
c. Less than the base supply
d. More than the collector supply
The current gain of the transistor is defined as the ratio of the collector current to the
a. Base current
b. Collector current
c. Emitter current
d. Supply current
The power dissipated by a transistor is approximately equals the collector current times
a. CE voltage
b. Base supply voltage
c. BE voltage
d. 0.7V
When using a DMM to test a transistor, an approximate reading of 0.7V will be found with how many ways?
a. Three
b. Two
c. None
d. One
Which of the following device revolutionized the computer industry
a. D-MOSFET
b. JFET
c. BJT
d. E-MOSFET input: 011 input: 101 input: 110