...MSE 542 – Final Term Paper Title: Organic Semiconductor for Flexible Electronics Name: Chunhung Huang Introduction: An organic semiconductor is an organic compound that possesses similar properties to inorganic semiconductors with hole and electron conduction layer and a band gap.4 Organic semiconductors differ from other organic material in that the molecules that they are made of have π conjugate bonds which allow electrons to move via π-electron cloud overlaps. Conduction mechanisms for organic semiconductor are mainly through tunneling, hopping between localized states, mobility gaps, and phononassisted hopping.5 Like inorganic semiconductors, organic semiconductors can be doped in order to change its conductivity. Although inorganic semiconductors such as silicon, germanium and gallium arsenide have been the backbone of semiconductor industry, for the past decade, demands for pervasive computing have led to a dramatic improvement in the performance of organic semiconductor. Recently, organic semiconductors have been used as active elements in optoelectronic devices such as organic light emitting diodes (OLED), organic solar cells, and organic field effect transistors (OFET). There are many advantages of using organic semiconductors, such as easy fabrication, mechanical flexibility, and low cost. Organic semiconductors offer the ability to fabricate electronic device at lower temperature and over large areas on various flexible substrate such as plastic and paper. They...
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...Course code: 15MA101 | Engineering Mathematics | L | T | P | C | | | 3 | 1 | - | 4 | Course Objectives | To train the students in basic mathematics essential for modeling and solving engineering problems. | Course Outcomes | 1. An ability to apply knowledge of mathematics, science and engineering. 2. An ability to identify, formulate and solve engineering problems | Differential Calculus: Review: Functions and graphs, Limits and Continuity, Differentiation, Maxima and minima of a function, Rolle’s Theorem, Mean Value Theorem. Indeterminate forms and L'Hopital's rule, Infinite sequences and series, Power series, Taylor's and Maclaurin's series, Convergence of Taylor's series, Error Estimates, Polar coordinates and Polar equations. Functions of two or more real variables, Partial derivatives of second and higher order, Euler’s theorem on homogenous function, Total derivatives, Differentiation of composite and implicit functions, Change of variable, Jacobians, Maxima and minima of functions of two or more variable, Lagrange’s method of undetermined multipliers. Integral Calculus: Estimating with finite sums and limits of finite sums, Definite integral, The fundamental theorem of calculus, Trigonometric substitutions, Integration by reduction formula for powers of some trigonometric functions, Improper integrals, Beta and Gamma integrals. Double integrals, Triple...
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...the way they are bonded together. The strength of a material can be examine as to how well they resist outside forces, and the ability of the material to conduct electricity. In fact the most important new material that has changed modern society, as a result the semiconductor and the microchip has changed and revolutionized computing. Several properties of silicon have made these developments in microelectronics possible. Silicon based microelectronic devices have revolutionized our world in the past three decades. Integrated circuits, built up from many silicon devices (such as transistors and diodes) on a single chip, control everything from cars to telephones, not to mention the Internet. Silicon technology is still the most reliable and cost-efficient way to fabricate large microelectronic circuits. Semiconductors have played an amazing role and have impacted technology in many ways. Every technology product we use in the modern world is created with silicon and depends on semiconductors. The earliest semiconductor device was a diode which let electricity flow in only one direction. Integrated circuits are called micro chips which are complex circuits that are made of many miniature chips of semiconductor and made of silicon. These chips are packaged in a plastic casing and the fine wires inside the chip link to the pins outside. Microchip is the integration of a whole CPU onto a single chip or on a few chips and greatly reduced the cost of processing power. The integrated...
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...the way they are bonded together. The strength of a material can be examine as to how well they resist outside forces, and the ability of the material to conduct electricity. In fact the most important new material that has changed modern society, as a result the semiconductor and the microchip has changed and revolutionized computing. Several properties of silicon have made these developments in microelectronics possible. Silicon based microelectronic devices have revolutionized our world in the past three decades. Integrated circuits, built up from many silicon devices (such as transistors and diodes) on a single chip, control everything from cars to telephones, not to mention the Internet. Silicon technology is still the most reliable and cost-efficient way to fabricate large microelectronic circuits. Semiconductors have played an amazing role and have impacted technology in many ways. Every technology product we use in the modern world is created with silicon and depends on semiconductors. The earliest semiconductor device was a diode which let electricity flow in only one direction. Integrated circuits are called micro chips which are complex circuits that are made of many miniature chips of semiconductor and made of silicon. These chips are packaged in a plastic casing and the fine wires inside the chip link to the pins outside. Microchip is the integration of a whole CPU onto a single chip or on a few chips and greatly reduced the cost of processing power. The integrated...
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...PHYSICS HOMEWORK Institution Student name Introduction The homework is composed of discussions of the capacitor - voltage relationship (C-V characteristics) in MOS capacitors. Transistors are also part of the homework. The capacitor-voltage analysis is a technique that is widely used to determine wide range parameters of MOS capacitors. These parameters involve flat-band voltage, threshold voltage, substrate doping concentration and the thickness of the gate oxides. The MOS capacitance is characterized by its capacitance, Cox. It has two capacitors that are connected in series at the depletion layer. These two capacitors are depletion layer and oxide capacitors that is, Cdep and Coxrespectively. When the MOS-capacitor is supplied by AC voltage, the gap width increase and contracts with respect to the AC frequency (Huff, 2005, pg. 219). To maintain the reliability and the quality of MOS structures is a vital practice among the MOS capacitors. The C-V measurements are employed mostly to determine the details and quality of gate oxides. On the MOS capacitor, measurements are done at the absence of the drain and source. The test operations provide the process information and at the same time ensuring efficient devices. The interface charges and bulk charges are also part of the parameters that are determined. The capacitor voltage measurements are carried out using tools like the Keithley model. The Keithley model makes use of 4200-SCS apparatus. Parameters like capacitance...
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...ESE 215 Introduction to Circuits and Systems Prepared by: The Task Group on ESE 215-205 N. Farhat, N. Engheta, J. Keenan, and V. Vuchic Background, Philosophy, and Motivation: Over the past few decades, the scope of electrical engineering (ESE in the context of our department) has expanded to a degree where the discipline risks effacement by diffusion [1]. This calls for hard thinking on how to reform traditional course offerings in our discipline in order to avoid incoherent bifurcations forced from the outside and to preserve its identity in view of profound changes taking place. We are not alone. Similar reforms are being discussed in physics education [2]. We as a relatively newly formed department of Electrical and Systems Engineering have had a head start in thinking about this issue recognizing that the challenge is to forge something better than the sum of its parts. This draft proposal is an attempt at reforming the present introductory Circuits and Systems course in our curriculum in order to partly meet this challenge. We have changed the course title to indicate that it will deal with “circuits and systems” concepts in a broader sense than the traditional electrical circuits alone. Our goal is that the course encompass electrical, optical (plasmonic), mechanical, fluidic, biological, neural, transportation, chemical, and ecological “circuits” and systems. Biochemical logic circuits using DNA-binding proteins, and bistable gene-regulatory...
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...OPTIMIZATION OF TWO DIMENSIONAL PHOTONIC CRYSTAL BAND GAP USING INDIUM PHOSPHIDE(InP) A thesis submitted in partial fulfilment of the requirements of Staffordshire University for the degree of Master of Science in Electronics Engineering Faculty of Computing, Engineering & Technology DECEMBER 2010 ABSTRACT Photonic crystals exhibit periodic structure and these are of many types such as one, two and three dimensional photonic crystals. Photonic crystal is a low loss periodic dielectric medium. In order to cover all periodic directions the gap must be extend to certain length which is equivalent to semiconductor band gap. The complete photonic band gap occurs in the three dimensional photonic crystals. The propagation of light which is confined to a particular direction can be analysed through Maxwell’s approach. The electromagnetic wave which contains both ‘E’ and ‘H’ fields can be calculated through these equations. These field vectors are more useful in calculating band structure of photonic crystal. This report deals with the calculation of band structure in two-dimensional photonic crystal. There are many methods for calculating band structure and this thesis is mainly focused on the plane wave expansion method. This report contains the simulation procedure for calculating band structure for both TE and TM modes in the presence of dielectric medium using Computer Simulation Technology (CST) microwave studio. Results which are obtained during the simulation provide...
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...Rana for her vision, thoughtful counseling and encouragement at every step of the project. I am also thankful to the teachers of the Department for giving us the best of knowledge and guidance throughout the term paper. And last but not the least, we find no words to acknowledge the financial assistance & moral support rendered by our parents in making the effort a success. All this has become reality because of their blessings and above all by the grace of god. • CERTIFICATE:- This is to certify that the project entitled “Hall Effect” submitted by SHAILENDRA SINGH has been carried out under our supervision. The project is submitted in fulfillment of the requirement for the 2nd semester of B.TECH ( ME). • Contents:- 1-Introduction of Hall Effect 2-Invention of Hall Effect 3-Illustration of Hall Effect 4-History 5-Types of Hall Effect a) Quantum Hall effect b) Spin Hall effect c) Anomalous Hall Effect d) Thermal effect 6- Effects of Hall Effect 7- Applications 8-...
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...LESSON 1: History of Electronics The introduction of vacuum tubes at the beginning of the 20th century was the starting point of the rapid growth of modern electronics. With the vacuum tubes the manipulation signals became possible, which could not be done with the early telegraph and telephone circuit or with the early transmitters using high voltage sparks to create radio waves. Example: weak radio and audio signals can be amplified, audio signals such as music or voice can be superimposed radio waves. The development of a large variety of tubes designed for specialized functions made possible the swift progress of radio communication technology before World War II and the development of early computers during and shortly after the war. The transistor invented in 1948, has now completely replaced the vacuum tubes in most of its application. Incorporating an arrangement of semiconductor materials and electrical contacts, the transistor provides the same functions at reduced cost, weight and power consumption and with higher reliability. Subsequent advances in semiconductor technology, in part attributable to the intensity of research associated with the space exploration effort led to the development of the integrated circuit. Integrated circuits may contain hundreds of thousands of transistors on small piece of material and allow the construction of complex electronic circuits, such as those in microcomputers, audio, and video equipment and communication satellites. ...
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...PROJECT ON NANO TECHNOLOGY CONTENT * INTRODUCTION * WHAT IS NANO SCIENCE? * IS THERE A NANO TECHNOLOGY? * NATIONAL NANO TECHNOLOGY INITIATIVE * CHEMISTRY’S ROLE IN NANO SCIENCE AND NANO TECHNOLOGY * NANO FABRICATION * NANO MEDICINE * RISKS OF NANO TECHNOLOGY * NANO TECHNOLOGY GOALS * SOCIETAL IMPLICATIONS * CONCLUSION INTRODUCTION There have been many influences and drivers for the development of technologies that allow functional components to be constructed at smaller and smaller scale. The semiconductor revolution in the second half of the 20th century was driven by cost, speed, novel function,and power consumption. Semiconductor science and its child, large-scale integration of electronic circuitry, have been responsible for an unprecedented paradigm change in almost every aspect of human life. The change is arguably even more profound than that which resulted from the industrial revolution. As we shall see later in this paper, although the fundamental limits of Moore’s Law have not yet been reached, this and the increasing energy consumption of these paradigm-breaking technologies will necessitate another paradigm shift in the near future.In terms of the influence of individuals, the development of what we now call functional nanoscience clearly owes much to several outstanding scientists, all of whom were awarded the Nobel Prize for their work. Shockley, Bardeen and Brattain’s discovery of the transistor,Kilby’s...
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...Allied Health, Pharmacy, Life Sciences, Management, Mass Communication, Information Sciences, Hotel Management, Regenerative Medicine and many more. India's top ranked institutions, including Manipal Institute of Technology (MIT) and the Kasturba Medical College (KMC) are part of Manipal University. These colleges have consistently been rated among India's top 10 institutions, in their respective fields, in different surveys over the last few decades. Manipal has come to be recognized for its excellence in Medical and Engineering programs and continuing education in the areas of IT, Semiconductor, Mechanical, Chemical, Management and Healthcare for employed professionals. In its endeavor to provide Continuing Education for the employed professionals, the group through Manipal University offers off campus part time programs in the areas of Information Technology / Information Science, Semiconductor, Mechanical, Chemical, Management, Healthcare and other areas. These programs are offered as exclusive programs to the corporate and customized to suit their requirement. They are also offered in a calendar...
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...Field-Effect Transistor (TFET) has been conducted in this project. A device performance comparison was carried out between Double Gate (DG) Tunneling Field-Effect Transistor and Gate All Around Si Nanowire (GAA SiNW) Tunneling Field-Effect Transistor. The device physics and electrical characteristics of the GAA SiNW TFET are investigated for better performance of gate control and low power consumption for the future scaling applications. Due to the high electric filed generated under the gate bias GAA SiNW TFET has high Ion and steep subthreshold swing. It is shown for the first time that subthreshold swing S is proportional to the diameter of the SiNW TFET and decreasing the diameter will lead to a better Ion /Ioff ratio. Device design and physics detailing the impact of drain and source engineering was discussed for SiNW TFET for lower off-state leakage current and a higher Ion with a steeper subthreshold swing S. Lastly, we have also investigated the effect of using high-k dielectric material and shorter gate length for SiNW for the future device applications. I. INTRODUCTION gate modulation gives a better Subthreshold swing which is smaller than 60 mV/decade and Lower Ioff Leakage Current of 10-14 A/um.[1],[2] Apart from Tunneling Field-Effect Transistor (TFET), Si Nanowires MOSFETs have been considered as the novel channel materials for the next-generation FET-type devices due to their novel material having promising device performance and novel transport characteristics. The outstanding...
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...Міністерство освіти і науки України Національний технічний університет України „Київський політехнічний інститут” Англійська мова професійного спрямування Методичні вказівки для розвитку всіх видів мовленнєвої діяльності на основі автентичних текстів з електроніки Для студентів 3-го курсу всіх спеціальностей ФЕЛ Затверджено Методичною радою НТУУ ”КПІ” Київ «Політехніка» 2005 Міністерство освіти і науки України Національний технічний університет України „Київський політехнічний інститут” Англійська мова професійного спрямування Методичні вказівки для розвитку всіх видів мовленнєвої діяльності на основі автентичних текстів з електроніки Для студентів 3-го курсу всіх спеціальностей ФЕЛ Затверджено Методичною радою НТУУ ”КПІ” Затверджено на методичному засіданні кафедри англійської мови №1. Протокол №1 від 04.10.05 Київ «Політехніка» 2005 Методичні вказівки з дисципліни „Англійська мова професійного спрямування” для розвитку навичок з аналітичного і самостійного читання для студентів 3-го курсу всіх спеціальностей факультету електроніки. /Уклад. Н.Е. Доронкина, Л.С. Петрова. – К. „Видавництво «Політехніка»”, 2005. – 72 с. Рецензент: Л.М. Захарова, кандидат філологічних наук, доцент. Передмова Методичні вказівки для розвитку всіх видів мовленнєвої діяльності на основі автентичних текстів з електроніки для студентів 3-го курсу побудовані відповідно до програми, яка передбачає навчання студентів вмінню працювати з англійською літературою за фахом, збагаченню...
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...INTRODUCTION Definition of nan'o•tech•nol'o•gy n So what exactly is nanotechnology? One of the problems facing nanotechnology is the confusion about its definition. Most definitions revolve around the study and control of phenomena and materials at length scales below 100 nm and quite often they make a comparison with a human hair, which is about 80,000 nm wide. Some definitions include a reference to molecular systems and devices and nanotechnology 'purists' argue that any definition of nanotechnology needs to include a reference to "functional systems". The inaugural issue of Nature Nanotechnology asked 13 researchers from different areas what nanotechnology means to them and the responses, from enthusiastic to sceptical, reflect a variety of perspectives. It seems that a size limitation of nanotechnology to the 1-100 nm range, the area where size-dependant quantum effects come to bear, would exclude numerous materials and devices, especially in the pharamaceutical area, and some experts caution against a rigid definition based on a sub-100 nm size. Another important criteria for the definition is the requirement that the nano-structure is man-made. Otherwise you would have to include every naturally formed biomolecule and material particle, in effect redefining much of chemistry and molecular biology as 'nanotechnology.' The most important requirement for the nanotechnology definition is that the nano-structure has special properties that are exclusively due...
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...Committee in charge: Professor Tsu-Jae King Liu, Chair Professor Chenming Hu Professor Eugene E. Haller Fall 2008 The dissertation of Pankaj Kalra is approved: Professor Tsu-Jae King Liu, Chair Date Professor Chenming Hu Date Professor Eugene E. Haller Date University of California, Berkeley Fall 2008 Advanced Source/Drain Technologies for Nanoscale CMOS Copyright © 2008 by Pankaj Kalra Abstract Advanced Source/Drain Technologies for Nanoscale CMOS by Pankaj Kalra Doctor of Philosophy in Engineering – Electrical Engineering and Computer Sciences University of California, Berkeley Professor Tsu-Jae King Liu, Chair Transistor scaling has been the driving force for technology advancements in the semiconductor industry over the last few decades. In order to mitigate short channel effects, the gate-oxide thickness and source/drain junction depth have been scaled along with the gate length. Recently, however, gate-oxide thickness scaling has slowed, as evidenced by the fact that an equivalent oxide thickness (EOT) of ~1 nm has been used for the past 2-3 generations of CMOS technology. Although significant progress has been made in the development of high-permittivity (high-κ) gate-dielectric materials and metal gate technology in recent years, it will be difficult to scale EOT well below 1 nm. This makes junction-depth scaling even more pressing for continued transistor scaling. Furthermore, as the dimensions of MOSFETs are scaled down, the contact...
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