design and physics detailing the impact of drain and source engineering was discussed for SiNW TFET for lower off-state leakage current and a higher Ion with a steeper subthreshold swing S. Lastly, we have also investigated the effect of using high-k dielectric material and shorter gate length for SiNW for the future device applications. I. INTRODUCTION gate modulation gives a better Subthreshold swing which is smaller than 60 mV/decade and Lower Ioff Leakage Current of 10-14 A/um.[1],[2] Apart from Tunneling
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Electrical Properties Electrical Conduction R Ohm’s law V = IR I Area, A l V where I is current (Ampere), V is voltage (Volts) and R is the resistance (Ohms or ) of the conductor Resistivity Resistivity, = RA/l ( -m), where A is the area and l is the length of the conductor. Electrical conductivity Conductivity, = 1/ = l/RA ( -m)-1 Band Theory Electrons occupy energy states in atomic orbitals When several atoms are brought close to each other in a solid
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Describe spark initiation in EDM Describe material removal mechanism in EDM Draw the basic electrical waveform used in EDM Identify the process parameters in EDM Describe the characteristics of EDM Identify the purpose of dielectric fluid in EDM List two common dielectric fluid Analyse the required properties of EDM tool List four common tool material for EDM Develop models for material removal rate in EDM Identify the machining characteristics in EDM Analyse the effect of process variables
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the mechanics and electrical theories of Nerve cells will be discussed. We will explore the way Nerve cells create and transmit electrical impulses and how a nerve cell membrane can be compared to a parallel plate capacitor. Topics such as Dielectrics, Capacitance and Permittivity will also be approached. In this problem we need to find the Electric Field intensity (E) within the membrane using surface charge density (σ). Find voltage (V) using E and the distance from plate to plate (d). Plot the
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PHYSICS FORMULAS 2426 Electron = -1.602 19 × 10-19 C = 9.11 × 10-31 kg Proton = 1.602 19 × 10-19 C = 1.67 × 10-27 kg Neutron = 0 C = 1.67 × 10-27 kg 23 6.022 × 10 atoms in one atomic mass unit e is the elementary charge: 1.602 19 × 10-19 C Potential Energy, velocity of electron: PE = eV = ½ 2 mv 1V = 1J/C 1N/C = 1V/m 1J = 1 N·m = 1 C·V 1 amp = 6.21 × 1018 electrons/second = 1 Coulomb/second 1 hp = 0.756 kW 1 N = 1 T·A·m 1 Pa = 1 N/m2 Power = Joules/second = I2R = IV [watts W] Quadratic Kinetic
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Permittivity of free space Permeability of free space Velocity of light Value e = (1.602 177 33 ± 0.000 000 46) × 10−19 C m = (9.109 389 7 ± 0.000 005 4) × 10−31 kg �0 = 8.854 187 817 × 10−12 F/m µ0 = 4π10−7 H/m c = 2.997 924 58 × 108 m/s Dielectric Constant (�r� ) and Loss Tangent (� �� /� � ) Material Air Alcohol, ethyl Aluminum oxide Amber Bakelite Barium titanate Carbon dioxide Ferrite (NiZn) Germanium Glass Ice Mica Neoprene Nylon Paper Plexiglas Polyethylene Polypropylene Polystyrene
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that point? a. Vector EA b. Vector EB c. Vector EC d. The electric field at that point is zero. 6. Inserting a dielectric material between two charged parallel conducting plates, originally separated by air and disconnected from a battery, will produce what effect on the capacitor? a. increase charge b. increase voltage c. increase capacitance d. decrease capacitance 7. Which of the following characteristics are held in common
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has slowed, as evidenced by the fact that an equivalent oxide thickness (EOT) of ~1 nm has been used for the past 2-3 generations of CMOS technology. Although significant progress has been made in the development of high-permittivity (high-κ) gate-dielectric materials and metal gate technology in recent years, it will be difficult to scale EOT well below 1 nm. This makes junction-depth scaling even more pressing for continued transistor scaling. Furthermore, as the dimensions of MOSFETs are scaled down
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2011-39011 10 May 2014 ENG 10 C-5R Draft No. 2 Introduction Today, electricity has been a major necessity for people for it gives energy to almost all devices that make their works easier. But before electricity could be consumed to power a load or a certain device, it needs to travel long distances through the utilization of electrical power systems. Electrical Power Systems consists of mainly of generating stations, transmission lines and distribution systems. From the generating
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PROJECT REPORT ON SANGUINOSCOPE Under the guidance of: Submitted by: Miss. Navdeep Kaur Harmanpreet Kaur (2009ECA1157) Bhawna Sharma (2011ECA1464) Anuradha
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