...Gate Effect on Nanowire Tunneling Field Effect Transistor (FET) Bai Ke, Department of Electrical & Computer Engineering, National University of Singapore Abstract—The simulation study on Si Nanowire Tunneling Field-Effect Transistor (TFET) has been conducted in this project. A device performance comparison was carried out between Double Gate (DG) Tunneling Field-Effect Transistor and Gate All Around Si Nanowire (GAA SiNW) Tunneling Field-Effect Transistor. The device physics and electrical characteristics of the GAA SiNW TFET are investigated for better performance of gate control and low power consumption for the future scaling applications. Due to the high electric filed generated under the gate bias GAA SiNW TFET has high Ion and steep subthreshold swing. It is shown for the first time that subthreshold swing S is proportional to the diameter of the SiNW TFET and decreasing the diameter will lead to a better Ion /Ioff ratio. Device design and physics detailing the impact of drain and source engineering was discussed for SiNW TFET for lower off-state leakage current and a higher Ion with a steeper subthreshold swing S. Lastly, we have also investigated the effect of using high-k dielectric material and shorter gate length for SiNW for the future device applications. I. INTRODUCTION gate modulation gives a better Subthreshold swing which is smaller than 60 mV/decade and Lower Ioff Leakage Current of 10-14 A/um.[1],[2] Apart from Tunneling Field-Effect Transistor (TFET), Si...
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