·The left side material is a p-type semiconductor having –ve acceptor ions and +vely charged holes. The right side material is n-type semiconductor having +ve donor ions and free electrons.
·Suppose the two pieces are suitably treated to form pn junction, then there is a tendency for the free electrons from n-type to diffuse over to the p-side and holes from p-type to the n-side . This process is called diffusion.
·As the free electrons move across the junction from n-type to p-type, +ve donor ions are uncovered. Hence a +ve charge is built on the n-side of the junction. At the same time, the free electrons cross the junction and uncover the –ve acceptor ions by filling in the holes. ·The left side material is a p-type semiconductor having –ve acceptor ions and +vely charged holes. The right side material is n-type semiconductor having +ve donor ions and free electrons.
·Suppose the two pieces are suitably treated to form pn junction, then there is a tendency for the free electrons from n-type to diffuse over to the p-side and holes from p-type to the n-side . This process is called diffusion.
·As the free electrons move across the junction from n-type to p-type, +ve donor ions are uncovered. Hence a +ve charge is built on the n-side of the junction. At the same time, the free electrons cross the junction and uncover the –ve acceptor ions by filling in the holes. ·The left side material is a p-type semiconductor having –ve acceptor ions and +vely charged holes. The right side material is n-type semiconductor having +ve donor ions and free electrons.
·Suppose the two pieces are suitably treated to form pn junction, then there is a tendency for the free electrons from n-type to diffuse over to the p-side and holes from p-type to the n-side . This process is called diffusion.
·As the free electrons move across the junction from n-type to p-type, +ve donor ions are uncovered. Hence a +ve charge is built on the n-side of the junction. At the same time, the free electrons cross the junction and uncover the –ve acceptor ions by filling in the holes.