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Technology Analysis

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Submitted By nikulkarni8
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[pic] Phase I Report

Title Aluminum doped Zinc Oxide Film and Nano-rod Array
Partner Institution Central South University
Inventor(s) Duan Xuechen et al.
Likely Market Global
Date 04 Jun 2010
[pic]

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Contents

1 Description and Application 3
2 Novelty, Benefits, Solutions 6
3 Competitive Technologies 11
4 Patent Landscape 14
5 Technology Landscape 22
6 Technology Bundling Opportunities 22
7 Market Opportunities 22
8 Market Size 23
9 Regulatory Environment 23
10 Geographic Description of Likely Markets 24
11 Commercialization Strategy 24
12 SWOT Analysis for Commercialization 24
13 Go/No Go Recommendation 25
14 Keywords and Phrases Used in Searches 25
15 Technology Triage Form Input 25

Description and Application

Lithium – ion batteries are the most common type of rechargeable batteries. The batteries being portable and light weight find extensive application in portable electronics goods such as laptops, cell phones, digital cameras.

There are essentially three functional components of Li – ion batteries namely cathode, anode and electrolyte. During the discharging of lithium – ion battery the lithium is extracted from the anode material and inserted into the cathode and the reverse occurs during the charging.

The chemical reactions taking place inside the Li – ion batteries wherein the cathode material is LiCoO2 are as follows:

Positive Electrode: LiCoO2 ↔ Li1-x CoO2 + xLi+ + xe-

Negative Electrode: C + xLi+ + xe- ↔ CLix

Cathode and Anode Materials

The anode materials currently being used in the industry are materials having high carbon content. Below is a list of four such Lithium based oxides.

|Anode Material |Average Voltage |Gravimetric Capacity |Gravimetric Energy |
|Graphite (LiC6) |0.1-0.2 V |372 mA·h/g |0.0372-0.0744 kW·h/kg |
|Titanate (Li4Ti5O12}) |1-2 V |160 mA·h/g |0.16-0.32 kW·h/kg |
|Si (Li4.4Si)[25] |0.5-1 V |4212 mA·h/g |2.106-4.212 kW·h/kg |
|Li|4.4|Ge)[26] |0.7-1.2 V |1624 mA·h/g |1.137-1.949 kW·h/kg |

The cathode materials currently being used in the industry are Lithium based oxides. Below is a list of seven such Lithium based oxides

|Cathode Material |Average Voltage |Gravimetric Capacity |Gravimetric Energy |
|LiCoO2 |3.7 V |140 mA·h/g |0.518 kW·h/kg |
|LiMn2O4 |4.0 V |100 mA·h/g |0.400 kW·h/kg |
|LiNiO2 |3.5 V |180 mA·h/g |0.630 kW·h/kg |
|LiFePO4 |3.3 V |150 mA·h/g |0.495 kW·h/kg |
|Li2FePO4F |3.6 V |115 mA·h/g |0.414 kW·h/kg |
|LiCo1/3Ni1/3Mn1/3O2 |3.6 V |160 mA·h/g |0.576 kW·h/kg |
|Li(LiaNixMnyCoz)O2 |4.2 V |220 mA·h/g |0.920 kW·h/kg |

The first three materials mentioned in the table are the most widely used cathode materials in the industry. Below is a comparison of these three materials.

|Materials Properties |LiCoO2 |LiNiO2 |LiMn2O4 |
|Structure |Hexagonal |Hexagonal |Cubic (Spinel) |
| |a = 2.82 Å, c = 14.05 Å |a = 2.88 Å, c = 14.18 Å |a = 8.24 Å |
|Theoretical capacity (mAh/g) |274 |275 |148 |
|Practical capacity (mAh/g) |120~130 |120~150 |100~120 |
|O2 evolution during overcharging |Yes |Yes |No |
|Diffusion coefficient (cm2/s) |10-7~10-9 |10-7~10-9 |10-9~10-11 |
|Conductivity (S/cm) |10 - 2 |10 - 1 |10 - 6 |
|Cost of the metal (US$/kg) |50 |8 |2 |
|Main advantages |Straight forward synthesis High |Highest capacity |3V plateau can be used as lithium |
| |cycle numbers Good capacity | |source for anode |
| |retention | | |
|Main drawbacks | |Reversibility highly dependent on|Synthesis is tricky Problems of |
| | |synthesis conditions Capacity |capacity retention at high |
| | |fading upon long-term cycling |temperature (>50ºC) |

CSU’s IP
|Patent/ application # |Title |Inventor(s) |Date of |Date of |Family members |
| | | |application |publication | |

Source:

http://en.wikipedia.org/wiki/Rechargeable_battery http://en.wikipedia.org/wiki/List_of_battery_types http://en.wikipedia.org/wiki/Lithium-ion_battery#Specifications_and_design http://www.limn2o4.com/ http://www.anl.gov/techtransfer/pdf/Profile_Li-Ion_Batteries_10-8-03.pdf http://industrial.panasonic.com/www-data/pdf/ACA4000/ACA4000PE3.pdf Novelty, Benefits, Solutions

CSU’s Technology

CSU’s technology relates to a method for manufacture of high capacity Li – ion battery composite cathode material. The technology is characterized by its good operation repeatability, simple handling and low operational cost.
The cathode material disclosed in the technology is a Lithium oxide containing Mn, Ni and Co namely. The structure of the material is represented as xLi[Li1/3Mn2/3]O2.(1-x)Li[Ni1/3Mn1/3Co1/3]O2.

The CSU invention relates to a preparation method of the high capacity Li – ion battery composite cathode material having the structure xLi[Li1/3Mn2/3]O2.(1-x)Li[Ni1/3Mn1/3Co1/3]O2 , characterized by comprising the following steps: 1. Adding the nickel compound, the cobalt compound, the manganese compound and lithium salts with a mol metering ratio: (1-a):(1-a):(1+a):(3+a) into a ball milling solvent medium of which the volume is 1-5 times the volume of the mixture to carry out ball milling even mixing, wherein 0≤a≤1;. 2. Drying the mixture obtained after ball milling; 3. Roasting the dried mixture after the dried mixture is sieved by a sieve of 100-400 meshes at a roast temperature of 600-1200 ℃to obtain xLi[Li1/3Mn2/3]O2.(1-x)Li[Ni1/3Mn1/3Co1/3]O2 lithium ion battery composite cathode material, wherein 0≤x≤1

Advantages of CSU’s technology 1. The lithium – ion battery composite cathode material xLi[Li1/3Mn2/3]O2.(1-x)Li[Ni1/3Mn1/3Co1/3]O2 prepared by CSU’s method has high discharge specific capacity which reaches 180-250 mAh/g within the voltage range of 2-4.8V.

2. The cathode material shows good circulation performance.

3. The CSU’s method has simple technology and good operational repeatability.

4. The CSU’s method can greatly reduce the production cost of lithium – ion battery.

5. The CSU’s technology uses the nickel, cobalt and managanese compounds which are sintered at normal air atmosphere

6. In the CSU’s method the adulteration of oxides of manganese with different valence states does not appear in the final product .

Existing technologies for preparing Li, Co, Ni and Mn based cathode material

The table below lists the known methods used to prepare Li, Co, Ni and Mn based cathode material for Li – ion batteries

|Name/Owner of Method |Method Description |
|Coprecipitaion Method |Adding an excessive amount of a first solution comprising a saturated lithium hydroxide solution with a second solution|
| |comprising nickel salt and cobalt salt and manganese salt |
| |Mixing said first and second solutions to form a co-precipitated precursor |
| |Filtering the mixed solution and obtaining a co-precipitated precursor |
| |Heating the co-precipitated precursor at a temperature higher than 600° C. to obtain the cathode material. |
|Oxalate precursor route |This method involves using oxalic acid and stoichiometrically mixed solutions of NiCl2, CoCl2, and MnCl2. The triple |
| |oxalate precursor of nickel, cobalt, and manganese is synthesized by liquid phase coprecipitation method to obtain the |
| |cathode material. |
|Mitsubishi chem corp |Pulverizing a nickel compound, a manganese compound, and a cobalt compound |
| |Uniformly dispersing them to make a slurry |
| |Spray drying and/or pyrolyzing the slurry to agglomerate the primary particles into secondary particles to make powder |
| |Mixing the powder with a lithium compound, and firing the resultant mixture in an oxygen-containing gas atmosphere. |
|Calcination/Sumitomo |Combining the compounds containing Li, Ni, Mn and Co in the required molar ratios and then calcining the resultant |
|chemical |metal compound mixture in the temperature range of preferably from 800 degree C to 1000 degree C. |
|Panasonic Solid |Not Available |
|Solution/Panasonic | |
|CSU’s technology |Adding the nickel compound, the cobalt compound, the manganese compound and lithium salts with a mol metering ratio: |
| |(1-a):(1-a):(1+a):(3+a) into a ball milling solvent medium of which the volume is 1-5 times the volume of the mixture |
| |to carry out ball milling even mixing, wherein 0≤a≤1;. |
| |Drying the mixture obtained after ball milling; |
| |Roasting the dried mixture after the dried mixture is sieved by a sieve of 100-400 meshes at a roast temperature of |
| |600-1200 ℃to obtain xLi[Li1/3Mn2/3]O2.(1-x)Li[Ni1/3Mn1/3Co1/3]O2 lithium ion battery composite cathode material, |
| |wherein 0≤x≤1 |
| | |

The following is a list of publications related to the preparation of Li, Co, Ni and Mn based cathode material for Li – ion batteries.

|Title |Abstract |Publication Date |Journal |
|Development of |We have developed a new cathode material for | 2006 |Matsushita Tech J |
|Nickel-Manganese-Cobalt based |lithium ion batteries with lower cost and | |VOL.52;NO.4;PAGE.240-244(2006) |
|Cathode Material (PSS) for Lithium|higher performance. The Nickel-Manganese-Cobalt| | |
|Ion Batteries |based cathode material developed by our company| | |
| |(called PSS: Panasonic Solid Solution) offers | | |
| |low cost and superior electrical | | |
| |characteristics. However, it was more difficult| | |
| |to synthesize than Lithium Cobalt Oxide | | |
| |(LiCoO2), and in addition, purity was low and | | |
| |there were problems with manufacturability and | | |
| |battery capacity for putting it to practical | | |
| |use. In investigations of Ni-Mn-Co compositions| | |
| |and synthesizing methods, we found | | |
| |LiNi1/3Mn1/3Co1/3O2 solved these problems. A | | |
| |new lithium ion battery using this material has| | |
| |been successfully commercialized since 2004. | | |
| |(author abst.) | | |
|Synthesis of LiNi1/3Co1/3Mn1/3O2 |Using oxalic acid and stoichiometrically mixed |June 2009 |Transactions of Nonferrous Metals |
|cathode material via oxalate |solution of NiCl2, CoCl2, and MnCl2 as starting| |Society of China |
|precursor |materials, the triple oxalate precursor of | | |
| |nickel, cobalt, and manganese was synthesized | |Volume 19, Issue 3, June 2009, Pages |
| |by liquid-phase co-precipitation method. And | |635-641 |
| |then the LiNi1/3Co1/3Mn1/3O2 cathode materials| | |
| |for Li-ion battery were prepared from the | | |
| |precursor and LiOH·H2O by solid-state reaction.| | |
| |The precursor and LiNi1/3Co1/3Mn1/3O2 were | | |
| |characterized by chemical analysis, XRD, EDX, | | |
| |SEM and TG-DTA. The results show that the | | |
| |composition of precursor is | | |
| |Ni1/3Co1/3Mn1/3C2O4·2H2O. The product | | |
| |LiNi1/3Co1/3Mn1/3O2, in which nickel, cobalt | | |
| |and manganese are uniformly distributed, is | | |
| |well crystallized with a-NaFeO2 layered | | |
| |structure. Sintering temperature has a | | |
| |remarkable influence on the electrochemical | | |
| |performance of obtained samples. | | |
| |LiNi1/3Co1/3Mn1/3O2 synthesized at 900 °C has | | |
| |the best electrochemical properties. At 0.1C | | |
| |rate, its first specific discharge capacity is | | |
| |159.7 mA·h/g in the voltage range of 2.75–4.30 | | |
| |V and 196.9 mA·h/g in the voltage range of | | |
| |2.75–4.50 V; at 2C rate, its specific discharge| | |
| |capacity is 121.8 mA·h/g and still 119.7 mA·h/g| | |
| |after 40 cycles. The capacity retention ratio | | |
| |is 98.27%. | | |

Sources:

▪ http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B82XX-4WGM4MN-S&_user=10&_coverDate=06%2F30%2F2009&_rdoc=1&_fmt=high&_orig=search&_sort=d&_docanchor=&view=c&_searchStrId=1394221345&_rerunOrigin=google&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=fbb536f367bde20665854901697a3392 ▪ http://www.freepatentsonline.com/7575831.html ▪ http://spinnovation.com/sn/Batteries/Recent_developments_and_likely_advances_in_lithium-ion_batteries.pdf ▪ http://sciencelinks.jp/j-east/article/200618/000020061806A0611787.php ▪ http://industrial.panasonic.com/eu/news/nr200601IE001/nr200601IE001.html ▪ http://www.thecdi.com/cobalt-patents-list-BATTERIES ▪ http://www.ysxbcn.com/icnfm2007/part2B/s0917.pdf ▪ http://v3.espacenet.com/publicationDetails/biblio?CC=WO&NR=2006085467A1&KC=A1&FT=D&date=20060817&DB=EPODOC&locale=en_gb ▪ http://v3.espacenet.com/publicationDetails/biblio?CC=EP&NR=2174915A1&KC=A1&FT=D&date=20100414&DB=EPODOC&locale=en_gb

Competitive Technologies

Primary companies driving research in the field of Li, Ni, Mn, Co based cathode materials for Li – ion battery

Mitsubishi Chemical Corporation

Mitsubishi Chemical Corporation was founded in the year 1994 as a result of merger between Mitsubishi Kasei Corporation and Mitsubishi Petrochemical Co., Ltd. Mitsubishi has a broad range of product spectrum which includes about 2600 major products. Mitsubishi manufactures 9 products which are battery materials, one of them being Li, Ni, Co and Mn based cathode materials namely NMC05/NMC07. Recently Mitsubishi Chemical Corp announced that it would increase its production capacity of lithium-ion battery cathode materials some 3.7 times, from 600 tons per year to 2,200 tons per year.

AGC Seimi Chemical Co Ltd

AGC Seimi Chemical was established in 1947. They have a close collaboration with Asahi Glass Co. They have wide range of area including electronics,optics, energy and pharmaceuticals. They are into manufacturing of Li, Ni, Co, MN based cathode material namely Selion L Series. The company seems to be performing continual R&D in the cathode material field.

3M

3m manufactures two types of Li, MN, Co, Ni based cathode materials namely BC-618 and BC-723. 3M claims to use upto six times less cobalt than Lithium Cobalt Oxide making their cathode materials less harmful.
Sources:

▪ http://www.ecofriendlymag.com/sustainable-transporation-and-alternative-fuel/mitsubishi-chemical-increasing-li-ion-nmc-cathode-material-production-37x/ ▪ http://www.m-kagaku.co.jp/webapps/pss/SearchProducts?categoryCode2=A09 ▪ http://www.yanoresearch.com/market_reports/C51102000?returnPage=%2Fmarket_reports%2FnewMr.php ▪ http://www.seimichemical.co.jp/eng/product/elect01.html ▪ http://www.seimichemical.co.jp/eng/company/greeting.html ▪ http://solutions.3m.com/wps/portal/3M/en_US/ElectronicsChemicals/Home/Products/BatteryCathodeMaterials/

Patent Landscape

We have identified 48 patents (one member per family) published in the last 20 years, that relate to AZO films.

|Publication Number|Assignee/Applicant |Title |Inventors |Publication |Family Members |
| | | | |Date | |
|US20090269588A1 |Murata manufacturing co.|Transparent conductive film and |Fukahori Souko, Kishimoto |10/29/2009 |CN101548343A, EP2071586A1, |
| |Ltd. |method of producing transparent |Yutaka | |KR10-2009-0094067A, |
| | |conductive film | | |WO2009031399A1 |
|US20080050595A1 |Murata manufacturing co.|Transparent conductive film and |Nakagawara Osamu, Seto |2/28/2008 |CN101180687A, EP1981036A1, |
| |Ltd. |method for manufacturing the same |Hiroyuki, Kishimoto Yutaka| |KR1020080011674A, WO2007080738A1 |
|US5470618A |Nippon soken inc. |Method of making zinc-based |Ohara Fumio, Hattori |11/28/1995 |JP02181304A |
| | |transparent conductive film |Tadashi, Ito Nobuei, | | |
| | | |Hattori Yutaka, Arai | | |
| | | |Masumi | | |
|US20090286071A1 |Nitto denko corporation |Transparent conductive film and |Sasa Kazuaki |11/19/2009 |CN101582304A, EP2166132A2, |
| | |method for production thereof | | |EP2166132A3, JP2009302032A, |
| | | | | |KR10-2009-0118836A |
|US20080166551A1 |Nitto denko corporation |Transparent conductive film and |Sasa Kazuaki, Kawamura |7/10/2008 |CN101221935A, EP1944386A1, |
| | |method for producing the same |Kazunori | |JP2008171642A, JP2008192460A, |
| | | | | |KR1020080065899A |
|US20090104455A1 |Sino american silicon |Transparent conductive component |Chen Miin-Jang, Hsu |4/23/2009 |None |
| |products inc. |utilized in touch panel |Wen-Ching, Ho Szu-Hua | | |
|US20080299411A1 |Sisom thin films, llc |Zinc oxide film and method for making|Oladeji Isaiah O. |12/4/2008 |US20080299703A1, US7700161B2 |
|US20080297302A1 |Chang gung university |On chip zinc oxide thin film |Chang Liann-Be, Chang |12/4/2008 |None |
| | |varistor, fabrication method thereof |Uan-Hsong | | |
| | |and applications thereof | | | |
|US20100089623A1 |Lg chem, ltd. |Conductive laminated body and method |Jang Hyeon Woo, Bang |4/15/2010 |EP2115185A1, KR1020080079048A, |
| | |for preparing the same |Jungsik | |KR1020090019634A, WO2008105614A1 |
|US20080188062A1 |Industrial technology |Method of forming microcrystalline |Chen Chi-Lin, Huang |8/7/2008 |CN101237006A |
| |research institute |silicon film |Chin-Jen | | |
|US20090298225A1 |Agency for science, |Doped metal oxide films and systems |Wu Ping, Gong Hao, Yu Zhi |12/3/2009 |CN100573836C, CN101142663A, |
| |technology and research |for fabricating the same |Gen | |JP2008520833T, WO2006054953A1 |
|US20070157966A1 |Kaneka Corporation |Process for producing transparent |Meguro Tomomi, Fukuda |7/12/2007 |EP1717341A1, EP1717341A4, |
| | |conductive film and process for |Susumu, Yamamoto Kenji | |WO2005078154A1 |
| | |producing tandem thin-film | | | |
| | |photoelectric converter | | | |
|US20070248515A1 |Air force united states |System and method for forming |Tompa Gary S., Rice |10/25/2007 |WO2005054537A2, WO2005054537A3 |
| | |multi-component films |Catherine E., Sbrockey | | |
| | | |Nick M., Hoerman Brent H.,| | |
| | | |Provost Lloyd G., Shangzhu| | |
| | | |Sun | | |
|US20030168973A1 |City university of hong |High-qualty aluminum-doped zinc oxide|Lee Shuit Tong, Jiang Xin,|9/11/2003 |US6917158B2 |
| |kong |layer as transparent conductive |Lee Chun Sing, Wong Fu | | |
| | |electrode for organic light-emitting |Lung | | |
| | |devices | | | |
|US20020025440A1 |Rohm co., ltd. |Transparent conductive film of zinc |Yamamoto Tetsuya, Nakahara|2/28/2002 |JP03904378B2, JP2002050229A, |
| | |oxide |Ken | |US6569548B2 |
|US20080283802A1 |Otkrytoe aktsyonernoe |Ceramic target, film consisting of |Abduev Aslan |11/20/2008 |CN101296880A, EP1923371A1, |
| |obshchestvo "polema" |zinc oxide, gallium and boron, and |Khajimuratovich, Asvarov | |EP1923371A4, JP2009517307T, |
| | |method for preparing the film |Abil Shamsudinovich, | |US20090218735A1, WO2007021214A1, |
| | | |Akhmedov Akhmed Kadievich,| |WO2007021221A1, WO2007021221A9 |
| | | |Kamilov Ibragimkhan | | |
| | | |Kamilovich | | |
|US20020028571A1 |Rockwell science center |Transparent and conductive zinc oxide|Cheung Jeffery T. |3/7/2002 |EP1041644A2, EP1041644A3, |
| |llc |film with low growth temperature | | |JP2001007026A, TW456051B, |
| | | | | |US20020084455A1, US6458673B1 |
|US6541908B1 |Rockwell science center |Electronic light emissive displays |Cheung Jeffrey T., |4/1/2003 |EP1218951A1, JP2003514343T, |
| |llc |incorporating transparent and |Williams George M., Warren| |TW477082B, WO0124290A1 |
| | |conductive zinc oxide thin film |Jr. Leslie F., Zhuang | | |
| | | |Zhiming | | |
|US6040521A |Showa shell sekiyu k |N-type window layer for a thin film |Kushiya Katsumi, Okumura |3/21/2000 |DE69739643D1, EP0841706A2, |
| | |solar cell and method of making |Daisuke, Sugiyama Ichiro | |EP0841706A3, EP0841706B1, |
| | | | | |JP3527815B2, JP10144946A |
|US6645843B2 |The united states of |Pulsed laser deposition of |Kim Heungsoo, Horwitz |11/11/2003 |US20020098668A1, US20030199157A1,|
| |america as represented |transparent conducting thin films on |James S., Kafafi Zakya H.,| |US6818924B2 |
| |by the secretary of the |flexible substrates |Pique Alberto, Kushto Gary| | |
| |navy | |P. | | |
|US7686985B2 |Nippon mining & metals |Gallium oxide-zinc oxide sputtering |Osada Kozo |3/30/2010 |CN101208453A, EP1897968A1, |
| |co. Ltd |target, method of forming transparent| | |JP04054054B2, KR1020080015892A, |
| | |conductive film, and transparent | | |RU2376263C2, US20090120786A1, |
| | |conductive film | | |WO2007000867A1 |
|US7651640B2 |Sekisui chemical co. |Gallium containing zinc oxide |Fukatani Juichi, Hatta |1/26/2010 |AU2006216251A1, BRPI0608275A2, |
| |Ltd., Kochi university | |Bungo, Yamamoto Tetsuya | |CA2594290A1, CN101124164A, |
| |of technology | | | |EP1852395A1, EP1852395A4, |
| | | | | |KR1020070112220A, MX2007007028A, |
| | | | | |RU2007135180A, US20080315160A1, |
| | | | | |WO2006090806A1 |
|US20100123103A1 |Sony corporation |Zinc oxide based sputtering target, |Kirita Shina, Kawashima |5/20/2010 |None |
| | |method for manufacturing zinc oxide |Toshitaka, Nagata | | |
| | |based sputtering target, zinc oxide |Takahiro, Kamori Yuichi | | |
| | |based transparent electrically | | | |
| | |conductive film, method for | | | |
| | |manufacturing zinc oxide based | | | |
| | |transparent electrically conductive | | | |
| | |film, and electronic apparatus | | | |
|US20090250669A1 |Nippon mining & metals |Gallium oxide/zinc oxide sputtering |Osada Kozo |10/8/2009 |CN101326304A, KR1020080066866A, |
| |co. Ltd. |target, method of forming transparent| | |RU2008122925A, US7674404B2, |
| | |conductive film and transparent | | |WO2007066490A1 |
| | |conductive film | | | |
|US20090206303A1 |Nippon mining & metals |Gallium oxide-zinc oxide sputtering |Osada Kozo |8/20/2009 |CN100549219C, CN101208452A, |
| |co. Ltd. |target, method for forming | | |EP1897969A1, EP1897969A4, |
| | |transparent conductive film, and | | |JP04098345B2, KR1020080016698A, |
| | |transparent conductive film | | |RU2008102934A, RU2380455C2, |
| | | | | |US7682529B2, WO2007000878A1 |
|JP4323620A |Dainippon printing co |Color filter |Nishimoto Takashi, Yamada |11/12/1992 |None |
| |ltd | |Atsutoshi | | |
|JP4212474A |Fuji electric co ltd |Manufacture of thin film solar |Fujikake Shinji |8/4/1992 |JP2822358B2 |
| | |battery | | | |
|JP6293956A |Japan energy corp |Zinc oxide transparent conductive |Nakada Tokio, Kabayama |10/21/1994 |None |
| | |film, its formation and sputtering |Masamichi | | |
| | |target used therefor | | | |
|JP2007154255A |Kanazawa inst of |Manufacturing method and |Minami Uchitsugu, Miyata |6/21/2007 |None |
| |technology |manufacturing apparatus for |Toshihiro | | |
| | |transparent conductive film | | | |
|JP2004079336A |Konica minolta holdings |Transparent conductive film and its |Ito Hiroto, Iwamaru |3/11/2004 |JP4352665B2 |
| |inc |forming method |Shunichi, Tsuji Toshio, | | |
| | | |Kiyomura Takatoshi, Mamiya| | |
| | | |Kaneo | | |
|JP2004010910A |Konica minolta holdings |Method for forming crystalline |Ito Hiroto |1/15/2004 |None |
| |inc |thin-film | | | |
|JP9246579A |Matsushita electric ind |Manufacture of thin-film solar cell |Terauchi Masaharu, Wada |9/19/1997 |JP3473255B2 |
| |co ltd | |Takahiro | | |
|JP7106615A |Matsushita electric ind |Transparent conductive film and |Furubiki Shigemi, Wada |4/21/1995 |JP3061342B2 |
| |co ltd |production of photoelectric |Takahiro | | |
| | |conversion semiconductor device | | | |
|JP2003204071A |Mitsubishi heavy ind ltd|Photoelectric conversion element |Yonekura Yoshimichi, |7/18/2003 |None |
| | |having gallium- containing zinc oxide|Yamashita Nobuki, Nakano | | |
| | |film and its manufacturing method |Yoji, Kureya Masayuki | | |
|JP2009110664A |Mitsubishi materials |Transparent conductive film and |Cho Shuhin, Mishima |5/21/2009 |None |
| |corp |sputtering target for forming |Terushi, Mayuzumi | | |
| | |transparent conductive film |Yoshiyuki | | |
|JP2003041363A |National institute for |Method for manufacturing zinc |Haneda Hajime, Hagino |2/13/2003 |JP3660980B2 |
| |materials science |oxide-based thin film |Takeshi, Adachi Yutaka, | | |
| | | |Sakaguchi Isao, Ohashi | | |
| | | |Naoki | | |
|JP7257944A |Nippon soda co ltd |Formation of transparent electrically|Kawamura Kiyoshi, Aizawa |10/9/1995 |None |
| | |conductive film |Mamoru, Saito Kazunori, | | |
| | | |Sakamoto Yasuko | | |
|JP2009144232A |Nippon telegr & teleph |Zno film deposition system and method|Akazawa Masayoshi |7/2/2009 |None |
| |corp | | | | |
|JP9045140A |Sumitomo metal mining co|Zinc oxide transparent conducting |Takatsuka Yuji |2/14/1997 |None |
| |ltd |film | | | |
|JP2000276943A |Tohoku ricoh co ltd |Transparent conductive film |Katsura Soutou, Fujii |10/6/2000 |None |
| | | |Michio, Haga Koichi | | |
|JP2001039712A |Osaka city, Matsushita |Modifying agent for zinc oxide film, |Isaki Masanobu, Hatase |2/13/2001 |JP2000336486A, JP2001011642A, |
| |electric ind co ltd, C |and modified zinc oxide film and its |Hiroshi, Saijo Yoshiji | |US20020187895A1, US6406750B1, |
| |uyemura & co ltd |preparation | | |US6723679B2 |
|JP7249316A |Asahi glass co ltd |Transparent conductive film and |Ebisawa Junichi, Sato |9/26/1995 |None |
| | |transparent substrate using the |Kazuo, Mitsui Akira, | | |
| | |transparent conductive film |Miyazaki Masami | | |
|EP1788119A1 |Air products and |Method for depositing zinc oxide at |Garg Diwakar, Henderson |5/23/2007 |JP2007138300A, KR1020070053617A, |
| |chemicals inc. |low temperatures and products formed |Philip Bruce, Tempel | |US20070116986A1 |
| | |thereby |Daniel Josef, Jackson | | |
| | | |Thomas N., Sun Jie | | |
|WO1998008245A2 |President and fellows of|Chemical vapor deposition of |Gordon Roy G., Kramer |2/26/1998 |WO9808245A3 |
| |harvard college |fluorine-doped zinc oxide |Keith, Liang Haifan | | |
|WO2009119962A1 |Sungkyunkwan university |Boron-doped zinc oxide based |Song Joon Tae, Lee Kyu Il |10/1/2009 |KR10-2009-0101571A |
| |foundation for corporate|transparent conducting film and | | | |
| |collaboration |manufacturing method of thereof | | | |
|WO2006117979A1 |Tokai kogaku co. Ltd., |Infrared blocking filter |Yamamoto Tetsuya, Kozaki |11/9/2006 |None |
| |Kochi university of | |Tetsuo | | |
| |technology | | | | |
|WO2009075585A1 |Universitetet i oslo, |Method of depositing a doped zinc |Nilsen Ola, Fjellvåg |6/18/2009 |None |
| | |oxide film, a conductive zinc oxide |Helmer, Ulyashin Alexander| | |
| | |film and use of the doped zinc oxide | | | |
| | |film | | | |

We identified 6 patents (one member per family) published in the last 20 years, that relate to AZO nanorod arrays.

|Publication Number|Assignee/Applicant |Title |Inventors |Publication|Family Members |
| | | | |Date | |
|US20070034857A1 |Samsung electronics co.,|Nitride-based white light emitting |Song June O. |2/15/2007 |KR1020050088961A, KR100750933B1, |
| |ltd. |device and manufacturing method | | |US7687820B2, JP2007053372A, |
| | |thereof | | |CN1917246A |
|WO2005054869A1 |Postech foundation |Biosensor comprising zinc oxide-based|Yi Gyu-Chul, Kim Jin Suk |6/16/2005 |KR1020050055456A |
| | |nanorod and preparation thereof | | | |
|WO2009006910A2 |Tallinn university of |Photovoltaic cell based on zinc oxide|Krunks Malle, Katerski |1/15/2009 |EP2174352A2, WO2009006910A3 |
| |technology |nanorods and method for making the |Atanas, Dedova Tatjana, | | |
| | |same |Mere Arvo, Oja Acik Ilona | | |
|US7491423B1 |Sandia corporation |Directed spatial organization of zinc|Hsu Julia, Liu Jun |2/17/2009 |None |
| | |oxide nanostructures | | | |
|EP2073226A2 |Electronics and |Dye-sensitized solar cell and method |Jun Yongseok, Kang Mangu, |6/24/2009 |KR10-2009-0065175A |
| |telecommunications |of manufacturing the same |Lee Seungyup, Kim Jongdae | | |
| |research institute | | | | |

We further identified 2 patents (one member per family) by CSU, published in the last 20 years that relate to alternative TCOs.

|Patent/ application # |Title |Inventor(s) |Date of |Date of |Family members |
| | | |application |publication | |
|CN101034633A |Electrical contact material |Gan Wei-Ping, Li Jing, Zhou |2006-03-08 |2007-09-12 |CN101034633A |
| |doping AgSnO2 and its |Zhao-Feng, Yang Fu-Liang, Lin | | | |
| |preparing method |Bing | | | |

Technology Landscape

The domain is currently monopolized by ITO but due to its drawbacks, industry is focusing on alternative TCOs. As the applications of TCOs are numerous, much research is being conducted by various industry giants. The market and patent landscape indicate strong dominance of Asian companies. Korea, Japan and China are the centers of electronics revolution backed by companies like Samsung, Sony, Panasonic, etc.
The industry considers AZO as the best alternative for ITO and therefore a lot of research is focused on it.
Several universities are also working in conjunction with the companies as the domain has huge market potential.

Technology Bundling Opportunities

We identified no patent publications published in last 20 years that can be bundled with CSU’s technology as the patent indicates higher conductivity in the product than offered by any other process.

However, an in depth study can conducted in phase two to explore the possibility of bundling CSU’s technology with another technology leading to an even higher conductivity.

Market Opportunities

1. IDTechEx’s report titled “Transparent Conductive Films for Flexible Electronics 2010-2020” (Brand new in Q4 2009, by Susann Reuter and Raghu Das) predicts that the market for transparent conducting films (TCFs) will be $0.24 million in 2010, mainly used in research and development and used in small quantities for commercial devices. By 2017 TCFs will become a billion dollar market for printed and potentially printed electronics, reaching $3.39 billion in 2020, mainly due to photovoltaics and OLED displays. The report gives forecasts by component for ten years.

2. According to a report published by NanoMarkets, The Future of ITO: Transparent Conductor and ITO Replacement Markets, March 2008, as much as $118 million in transparent conductor will be sold into the touch-screen market in 2008, rising to $400 million by 2015 at a CAGR of 19%.

3. Another report by NanoMarkets predicts that revenues from the leading ZnO-related electronics applications ranging from enhanced antistatic coatings to high-value-added products such as solid-state lighting and display backplanes will reach about $860 million in 2012, rising to $2.3 billion in 2016.

4. The report titled, “Transparent Conductor Markets 2010: ITO and the Alternatives” says that while alternative transparent conductors will account for just 5 percent of transparent conductor revenues in 2010, by 2015 that share will grow to almost 20 percent. According to NanoMarkets latest projections, the entire transparent conductor market (including ITO) will be worth $5.6 billion in 2015.

5. While, alternatives to ITO will grow rapidly, NanoMarkets still expects ITO to dominate the transparent conductor market for years to come. Sales of ITO are expected to reach $4.5 billion by 2015.

6. By 2015 NanoMarkets expects the non-ITO TCO market, in the thin-film photovoltaics domain, to reach $320 million, three times what it is today.

Summary of market projections for transparent conductive films:

|1. |TCO for flexible electronics (including ITO) |$0.24 M (2010) |$1 B (2017) |CAGR 229% |
|2. |TCO for touch screen market (including ITO) |$118 M (2008) |$400 M (2015) |CAGR 19% |
|3. |ZnO-related electronics applications overall |$860 M (2012) |$2.3 B (2016) |CAGR 28% |
|4. |Transparent conductor market (including ITO) | |$5.6 B (2015) | |
| |Transparent conductor market (alternative conductors, | | | |
| |excluding ITO) | |$1.1 B (2015) | |
|5. |ITO sales | |$4.5 B (2015) | |
|6. |Non-ITO TCO market in photovoltaic |$107 M (2010) |$320 M (2015) |CAGR 25% |

Source:

▪ http://www.idtechex.com/research/reports/transparent_conductive_films_for_flexible_electronics_2010_2020_000234.asp ▪ http://www.oled-info.com/dai-nippon-printing-has-developed-flexible-transparent-conductive-film-can-replace-itos-oleds ▪ http://nanomarkets.net/articles/article/alternatives_materials_for_ito_in_touch_screens/ ▪ http://www.azonano.com/news.asp?newsID=10094 ▪ http://nanomarkets.net/market_reports/report/transparent_conductor_markets_2010_ito_and_the_alternatives/ ▪ http://www.prlog.org/10736825-nanomarkets-issues-new-report-on-ito-and-alternative-transparent-conductors.html

Market Size

As indicated by NanoMarkets’ reports, the market share of ITO alternatives by 2015 will be $1.1 billion ($5.6 billion - $4.5 billion).

Using the CAGR of 19%, which actually is the CAGR for touch screen panels, the market share of ITO alternatives is estimated to be $460 million approximately in the year 2010.

Based on the information available, the potential market size for this technology appears to be:

a. USD 1M to USD 10M

b. USD 10M to USD 50M

c. USD 50M to USD 250M

d. USD 250M to USD 1B

e. USD 1B to USD 5B

f. More than USD 5B

Regulatory Environment

United States
Scientists from several Federal agencies and the National Technology Initiative (NNI) are working on developing standards for nanotechnology related environmental, health and safety aspects. In June 2004, American National Standards Institute (ANSI) established a nanotechnology standards panel.
Subsequently, the International Organization for Standardization (ISO) established a Technical Committee (ISO TC 229) for nanotechnologies. In June 2006, ISO TC 229 approved a US submission to develop an ISO Technical Report on current safe practices in occupational settings relevant to nanotechnologies. The National Institute for Occupational Safety and Health (NIOSH) document Approaches to Safe Nanotechnology: An information exchange with NIOSH will serve as a benchmark for that report.
Source:

▪ http://www.nano.gov/NNI_EHS_research_needs.pdf ▪ http://www.iso.org/iso/iso_catalogue/catalogue_tc/catalogue_tc_browse.htm?commid=381983 ▪ http://www.cdc.gov/niosh/docs/2009-125/pdfs/2009-125.pdf

Geographic Description of Likely Markets

From a geographic perspective, the most probable users of this technology will be:

a. Home country of partner institution

b. Asia

c. US

d. Global

Commercialization Strategy

The market is in need of a suitable alternative to ITO. AZO is a promising alternative and CSU’s technology is really promising owing to its high conductivity:

▪ Licensing: As the nanotechnology field is expensive, the technology can be licensed to companies in the OLED, FPD, touch screen panels and solar cell domain. Following is a list of possible licensees of CSU’s technology:

• Samsung • Sony • Panasonic • Oerlikon Solar • Fujifilm • Umicore

SWOT Analysis for Commercialization

|Strengths |Weaknesses |
|Increased transparency |Market is still in the development phase |
|Large area deposition leading to bulk manufacturing | |
|Opportunities |Threats |
|Market potential of over $3.3 billion by 2020 |Other TCOs such as ITO, ATO, FTO and more |
|Numerous applications |High competition |

Go/No Go Recommendation

AZO OR ZAO is an extremely potential alternative to ITO films and nanostructures. However, the market is young and the large area deposition techniques are still under development.

A further study needs to be conducted to identify the benefits of CSU’s technology over existing techniques. A further study is also recommended to evaluate the possibility of licensing the technology to existing players.

Recommendation: Proceed to Phase II -- (

Keywords and Phrases Used in Searches

1. Micropat/Thomson Innovation search

The search was conducted on April 27, 2010 on Thomson Innovation database.
Databases: US Grant, GB App, US App, FR App, WO App, DE Util, EP Grant, DE Grant, EP App, DE App, JP Grant, CN App, CN Util, JP Util, KR Util , JP App, KR Grant, KR App, Other

|S. No. |Key Strings |No. of Patents |
|1 |CTB=((((transparen* NEAR2 conduct*) WITH oxide*1) OR ((((metal OR zinc OR indium OR tin) NEAR2 oxide*1) OR ZnO|4 |
| |OR SnO2 OR In2O3) WITH (dope OR doped OR doping)) OR ((TCO OR AZO OR ZAO OR ITO OR ATO OR FTO) WITH (dope OR | |
| |doped OR doping)))) AND PA=(((central near3 south near3 univ*) or (CSU) OR (C.S.U.))); | |
|2 |CTB=((((zinc ADJ oxide*1) OR ZnO OR AZO OR ZAO) NEAR5 (film*1 OR thinfilm*1 OR nanofilm*1 OR nanorod*1 OR |264 |
| |(nano ADJ rod*1))) SAME *doped) AND DP>=(19910101); | |
|3 |CTB=( ((zinc ADJ oxide*1) OR ZnO OR AZO OR ZAO) NEAR5 (film*1 OR thinfilm*1 OR nanofilm*1 OR nanorod*1 OR |112 |
| |(nano ADJ rod*1))) AND Class=( 25251951 OR 428411 OR C01G000902) AND DP>=(19910101); | |

Technology Triage Form Input

1. Technology Ownership

Is the technology co-owned by another party? * Yes No

2. Technology Description

The technology is?* Competing with existing Improvement/Evolutionary Leapfrogs existing New/Revolutionary

Regulatory Environment? * High Moderate Low

Development Time Required * 3 years

Research Funded by? * Outside Investment Government Sponsored Institution

3. Intellectual Property

How many patents have been issued?* 10 or more patents issued 5 or more patents issued 1 or more patents issued No patents issued

Are there pending patent applications?* No pending patent applications issued 1 or more pending patent applications 5 or more pending patent applications

Foreign Application Possible?* No Yes

Is the number of backward citations per patent >10?* Yes (in most of the patents) No

Are more than half of all patents are outside G8?* No Yes

Do additional patents need to be licensed?* Yes No Not Sure

Type of Claims* Method Article Method & Article Not Available

Bundle Opportunity?* No Not Sure Yes

Existing Patent Landscape* Very Crowded Moderately Crowded Not Crowded

4. Commercialization

Potential Market Size* USD 1- 10 million USD 10-50 million USD 50-250 million USD 250 million - USD 1 billion USD 1-5 billion >USD 5 billion

Geographic Description of Likely Market* Home country of institution Asia U.S. Global

Estimated Funding for Commercialization* >USD 3 million USD 1-3 million USD 500K-USD 1 million USD 250K-USD 500K USD 100K-USD 250K (for R$D development) 80% in visible range and resistivity less than 1x10-3 ©-cm is required, while CSU s technology provides transmittance ~ 89% the resistivity ~ 5x10-3 (more than 5 times hiΩ-cm is required, while CSU’s technology provides transmittance ~ 89% the resistivity ~ 5x10-3 (more than 5 times higher than industry standard).

Till date, tin-doped indium oxide (ITO) has a monopoly in this domain. But owing to its limited reserves, high cost and noxious nature, industry is looking for alternatives. The major possible alternatives are antimony-doped tin oxide (ATO), fluorine-doped tin oxide (FTO) and AZO. Amongst all, AZO appears to be the most suitable alternative. However, technology hasn’t yet developed enough for any of these alternatives to truly replace ITO.

There are various technologies related to preparation of AZO films like magnetron sputtering, spray pyrolyis, sol-gel and various others. Preparation of AZO films using sol-gel technique is already know in the art.

The TCO market is currently few million dollars but is expected to touch the billion mark by 2017.

As various big players like Sony, Samsung, Panasonic are working in this domain, CSU’s technology which is a considerable improvement over the current technologies can be licensed to these companies.

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...------------------------------------------------- Due to the nature of technology, particularly in crimes committed on the Internet, criminal behavior often occurs across jurisdictional boundaries. It is important, therefore, for law enforcement officers to collaborate with other agencies at the Federal, State, and local levels to successfully investigate these types of crimes and apprehend the offenders. Officers using technology in investigations should also be aware that Federal, State, and local agencies and professional organizations; can provide training and technical and investigative assistance. Information of investigative value; can be collected from a variety of sources including people, places, and things. While conducting interviews, it is important to determine the victims, suspects, or witness’s skill level as it relates to technology. Some technological tools that might be use in the communication process are audio analysis that is; obtain by law enforcement that may contain ambient noise that interferes with interpretation. Technology exists to analyze and improve the quality of the recordings. Video analysis is another tool obtained by law enforcement that are often surveillance tapes, which are multiplexed proprietary in format, will need to be viewed on a specific platform, or are of poor quality. Technology exists to analyze and improve the quality of the recorded images that may be available from the manufacturer or end user of the video equipment. Picture analysis is another tool exists to analyze...

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